Multi-Carrier Transport Properties in P-Type Zno Thin Films

H. B. Ye,J. F. Kong,W. Pan,W. Z. Shen,B. Wang
DOI: https://doi.org/10.1016/j.ssc.2009.06.030
IF: 1.934
2009-01-01
Solid State Communications
Abstract:By the aid of temperature- and magnetic-field-dependent Hall effect measurements, we have extracted the multi-carrier transport information in N-doped and N–In codoped p- ZnO thin films grown on Si substrates through mobility spectrum analysis. It is found that owing to the compensation between free electrons and holes, the two-dimensional hole gas from ZnO/Si interface layers becomes determinant and results in the high p-type conductivity and high hole mobility in the ZnO samples. Compared with N-doping, the N–In codoping introduces many In donors and increases acceptor incorporation, as well as enhancing the free hole mobility due to the short-range dipole-like scattering.
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