Abstract:Impact caused by Through-Silicon Via (TSV) induced thermo-mechanical stress on device performance has been a concern for three-dimensional (3D) integrated circuit (IC) integration because of the close proximity of TSVs to semiconductor devices. From the literatures, there are conflicting reports between theory, simulated and experimental results. For realistic and reasonably accurate predictions, the stress build-up by taking the full CMOS process flow into consideration is simulated. We investigated various key factors such as the orientation of TSV to device, device channel length and different CMOS technologies on the impact of TSV induced thermo-mechanical stress on device performance. Results exhibit that TSV induced stress impacts more on long channel nMOSFETs typically used in analog applications than that on digital devices of minimum channel length for the same CMOS technology. This is mainly due to the decrease in the impact of tensile stress liner in the long channel nMOSFET. In addition, the impact of TSV induced stress on nMOSFET devices of the same channel length of 180 nm is found to be larger for 130 nm technology than 28 nm and 65 nm technologies, which resolves conflicts in past reports.

High-Frequency Temperature-Dependent Through-Silicon-Via (TSV) Model and High-Speed Channel Performance for 3-D ICs

Frequency- and temperature-dependent modeling of coaxial through-silicon vias for 3-D ICs

Electrothermal modeling of coaxial through silicon via (TSV) for three-dimensional ICs

Electrothermal modelling of through silicon via (TSV) interconnects

Electrothermal Effects in High Density Through Silicon Via (tsv) Arrays

High-Frequency Electrothermal Characterization of TSV-Based Power Delivery Network

Sensitivity analysis of through-silicon via (TSV) interconnects for 3-D ICs

Modeling of a Pair of Annular Through Silicon Vias (TSV)

Electrothermal modelling and characterisation of submicron through-silicon carbon nanotube bundle vias for three-dimensional ICs

Electrical Characterization of Through-Silicon Vias (TSV) with Different Physical Configurations

Electrothermal characteristics of carbon-based through-silicon via (TSV) channel

Impact of Technology Scaling on Electrical Characteristics of Through-Silicon Via Correlated with Equivalent Circuits

Modeling and Characterization of Joule Heating in Metal Core of Tsv

A Rigorous Model for Through-Silicon Vias with Ohmic Contact in Silicon Interposer

Capacitive coupling analysis of TSV array in 3D packaging

Comprehensive study of the impact of TSV induced thermo-mechanical stress on 3D IC device performance

Lumped 3-D Equivalent Thermal Circuit Model for Transient Thermal Analysis of TSV Array

Modeling and Application of Multi-Port TSV Networks in 3-D IC

Electrical–Thermal Cosimulation of Coaxial TSVs with Temperature-Dependent MOS Effect Using Equivalent Circuit Models

Compact Wideband Equivalent-Circuit Model for Electrical Modeling of Through-Silicon Via

Full RLGC Model Extraction of Through Silicon Via (TSV) with Charge Distribution Effects