Abstract:In this work, we address issues pertinent to the understanding of the structural and electronic properties of Si_{1-x} Ge_{x}alloys, namely, (i) how does the lattice constant mismatch between bulk Si and bulk Ge manifests itself in the alloy system? and (ii) what are the relevant strain release mechanisms? To provide answers to these questions, we have carried out an in-depth study of the changes in the local geometric and electronic structures arising from the strain relaxation in Si_{1-x} Ge_{x} alloys using an ab initio molecular dynamics scheme. The optimized lattice constant, while exhibiting a general trend of linear dependence on the composition (Vegard's law), shows a negative deviation from Vegard's law in the vicinity of x=0.5. We delineate the mechanisms responsible for each one of the above features. We show that the radial-strain relaxation through bond stretching is responsible for the overall trend of linear dependence of the lattice constant on the composition. On the other hand, the negative deviation from Vegard's law is shown to arise from the angular-strain relaxation.

A Method to Estimate the Strain State of SiGe/Si by Measuring the Bandgap

Calculation of Elastic Strain Fields for Single Ge/Si Quantum Dots

Tight-binding Study of the Strained Monolayer Superlattices (si)1/(si1−xgex)1 (100)

Application of Raman Scattering to Study the Strain Distribution in SiGe Layers

Raman-Scattering Spectroscopy of Gesi/Si Strained-Layer Superlattice

A New Method of Fabricating Strained Silicon Materials

Study of strain distribution in GeSi/Si strained heterostructure

Strain Relaxation In Sige Virtual Substrate Characterized By High Resolution X-Ray Diffraction

Fabrication and Characterization of Strained Si Material Using SiGe Virtual Substrate for High Mobility Devices

Quantitative Strain Characterization of SiGe Heterostructures by High-Resolution Transmission Electron Microscopy

Strain Relaxation Mechanisms and Local Structural Changes in Si_{1-x}$Ge_{x} Alloys

Calculation of the bandgap narrowing due to heavy doping in p-type strained Si1-xGex layers

Strain effect analysis on the electrical conductivity of Si/Si 1-xGex nanocomposite thin films

A Self-Consistent Numerical Approach for Characterizing the Band Structures and Gain Spectrum of Tensile-Strained and N(+)-Doped Ge/GeSi Quantum Wells

Strain study of partially relaxed Ge epilayers on Si (100) substrate

Investigation of strain and thin film relaxation in Ge xSi 1-x/Si strained-layer superlattice by dark-field electron holography

Near Band-Edge Photoluminescence in Strained and Relaxed Si<sub><b>1</b>-<b>x</b></sub>Ge<sub><b>x</b></sub>/Si Quantum Wells

Raman Spectroscopy of Strained GeSi Alloys Deposited on Ge Substrates

Strains in Si Substrate Induced by Formation of Ge Islands

Band structure of strained Ge$_{1-x}$Sn$_x$ alloy: a full-zone 30-band $k\cdot p$ model

Strain Relaxation and Misfit Dislocation in SiGe Epilayers Grown in Micron Size Windows by MBE