Abstract:The anodic dissolution of silicon in acidic electrolytes is a well-known technology enabling the silicon machining to be accurately controlled down to the micrometer scale in low-doped n-type silicon electrodes. Attempts to scale down this technology to the submicrometer scale has shown to be challenging, though it premises to enable the fabrication of meso and nano structures/systems that would greatly impact the fields of biosensors and nanomedicine. In this work, we report on the electrochemical etching at high anodic voltages (up to 40 V) of two-dimensional regular arrays of millions pores per square centimeter (up to 30 × 106 cm-2) with sub-micrometric diameter (down to ~860 nm), high depth (up to ~40 μm), and high aspect-ratio (up to ~45) using low-doped n-type silicon electrodes (resistivity 3-8 Ω cm). The use of high anodic voltages, which are over one order of magnitude higher than that commonly used in electrochemical etching of silicon, tremendously improves hole focusing at the pore tips during the etching and enables, in turn, the control of electrochemical etching of submicrometer-sized pores when spatial period reduces below 2 μm. A theoretical model allows experimental results to be interpreted in terms of an electric-field-enhanced focusing of holes at the tip apex of the pores at high anodic voltages, with respect to the pore base, which leads to a smaller curvature radius of the tip apex and enables, in turn, the etching of pore tips to be preferentially sustained over time and space.

The Improvement of Electrochemical Etching Process for Silicon Microchannel Plates.

Photo-electrochemical Etching of Macroporous Silicon Arrays Used in Silicon Microchannel Plates

Influence of Surfactant on Aperture of Photo-Electro-chemical Etching for Silicon Microchannel Plate

Influences of Temperature and Etching Voltage on the Surface Morphology of Photo-Electro-Chemical Etching for Silicon Microchannel Arrays

Micro Etching Method Inside Microchannels

I-V characterization study of porous silicon formation by doubled-cell electrochemical etching

Optimization of Metal-Assisted Etchant Components for Fabrication of Porous Silicon

A novel method of fabricating porous silicon material: ultrasonically enhanced anodic electrochemical etching

Design and fabrication of a nanofluidic channel by selective thermal oxidation and etching back of silicon dioxide made on a silicon substrate

High Anodic-Voltage Focusing of Charge Carriers in Silicon Enables the Etching of Regularly-Arranged Submicrometer Pores at High Density and High Aspect-Ratio

Hydrofluoric Acid Free Synthesis of Macropores on Silicon by Chemical Vapor Deposition and Their Photoluminescence

Study on Reactive Ion Etching of Silicon in Fabrication Process of Piezoelectric Microcantilever

Method for Fabricating Micro/Nanostructures Via Scanning Probe Microscope and Anisotropic Wet Etching

Influences of Temperature and Concentrations on Morphology of Tmah Anisotropic Etching for Silicon Microchannel Plate

Silicon microstructure processing method based on femtosecond laser treatment and wet etching

Study of the Relationship Between Metal-Assisted Chemical Etching and Direction of the Applied Electric Field

High Aspect Ratio Si Etching Technique and Application

Pulsed Anodic Etching: an Effective Method of Preparing Light-Emitting Porous Silicon

The Developments of Si Microchannel Plates for Electron Multiplying

Uniform Metal-Assisted Chemical Etching for Ultra-High-Aspect-Ratio Microstructures on Silicon

Etching and passivation of silicon in alkaline solution: A coupled chemical/electrochemical system