Wafer heating apparatus

우치야마교지,나가사키고이치,후레히로시
2002-04-26
Abstract:PURPOSE: A wafer heating apparatus is provided to shorten an interval of time until a wafer reaches a target temperature or the wafer is cooled down to a predetermined temperature and to increase the temperature of the surface of the wafer during a heat treatment process regarding the wafer while uniformly distributing the temperature, by uniformly heating the entire surface of the wafer fixed to a disposition surface of a uniform plate within a range of plus or minus 0.5 deg.C. CONSTITUTION: A ceramic heater simultaneously satisfies the following. 0.15<=S<=0.85, 0.3<=P<=6.71xS2+1.52, and 0.3<=G<=6.71x(1-S)2+1.55, in which the reference characteristic S1 denotes the surface area of a heating element in optional 10 millimeter square region of an effective heat generation area having the heating element therein. The surface ratio S denotes S=S1/100 square millimeter. The reference character P denotes the width of the heating element. The reference character G denotes the gap between the heating elements.
Engineering,Materials Science
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