Abstract:In the semiconductor industry supply chain, there are complex processing steps from wafer to chip. Rapid Thermal Processing (RTP) is one of the key technologies, using lasers or high-temperature lamps to rapidly heat the wafer to over 1000°C for several seconds. This technique can produce high-quality silicides and oxides on the wafer while reducing the thermal budget in terms of temperature and time. RTP systems must be able to change the spatial energy distribution radiated onto the wafer to maintain temperature uniformity under different processing conditions, including varying gases, pressures, and wafer structures. However, the non-equilibrium conditions in RTP make modeling and prediction challenging, with temperature coupling issues in different wafer regions. This paper models the wafer heating system as a 5th-order time-delayed first-order inertia matrix and proposes a corresponding feedforward decoupling method. Traditional incremental PID control, when ramping up temperatures above 1000°C, leads to prolonged oscillations near the target temperature due to temperature coupling between regions, resulting in slow temperature convergence. The method proposed in this paper can effectively eliminate inter-regional coupling effects, unify PID parameters for better determination, and deploy them in practical RTP systems. Experimental results demonstrate that temperature convergence can be achieved rapidly, enhancing system heating efficiency. This study provides an effective solution to temperature control issues in wafer processing, with important practical implications for the semiconductor equipment manufacturing industry.

Analysis of the Effect of Heating Control Conditions on Temperature Distribution in a Wafer During Rapid Thermal Processing With Lamp Heaters

A MIMO Decoupling Algorithm for Rapid Heating Systems of Wafers

Analysis of Radial Temperature Field for a Metal-Vapor Laser Tube with an Axial Temperature Controller

Modeling Of Two-Dimensional Dynamic Temperature Distribution Of A Lpcvd Process And Control Design By Mpc

Thermal Management for Thermoset Automated Fiber Placement Based on Infrared Heater Structure Arrangement

Optimization of rapid thermal processing for uniform temperature distribution on wafer surface

Modelling of wafer heating during rapid thermal processing

A Design Method to Improve Temperature Uniformity on Wafer for Rapid Thermal Processing

Thermal design aspects for improving temperature homogeneity of silicon wafer during thermal processing in microlithography

Temperature distribution in semiconductor wafers heated in a vertical diffusion furnace

Thermal uniformity of 12-in silicon wafer in linearly ramped-temperature transient rapid thermal processing

Observer-based temperature control of an LED heated silicon wafer

Study of temperature distributions in wafer exposure process

Wafer-to-wafer temperature distribution control in a diffusion furnace

Thermal uniformity of 12-in silicon wafer during rapid thermal processing by inverse heat transfer method

Decentralized control of wafer temperature for multizone rapid thermal processing systems

An In Situ Approach to Real-Time Spatial Control of Steady-State Wafer Temperature During Thermal Processing in Microlithography

Critical dimension and real-time temperature control for warped wafers

Heat Transfer Analysis and Optimization for Wafer System of Laser Annealing Equipment

Development of high-throughput rapid heat-treatment and characterization process

Open-loop Temperature Rise History Control Method with Scanning Electron Beam As a Programmable Heat Source