An In Situ Approach to Real-Time Spatial Control of Steady-State Wafer Temperature During Thermal Processing in Microlithography
Arthur Tay,Weng Khuen Ho,Ni Hu
DOI: https://doi.org/10.1109/tsm.2007.890770
IF: 2.7
2007-02-01
IEEE Transactions on Semiconductor Manufacturing
Abstract:We proposed an in situ method to control the steady-state wafer temperature uniformity during thermal processing in microlithography. Thermal processing of wafer in the microlithography sequence is conducted by the placement of the wafer on the bake-plate for a given period of time. A physical model of the thermal system is first developed by considering energy balances on the system. Next, by monitoring the bake-plate temperature and fitting the data into the model, the temperature of the wafer can be estimated and controlled in real-time. This is useful as production wafers usually do not have temperature sensors embedded on it, these bake-plates are usually calibrated based on test wafers with embedded sensors. However, as processes are subjected to process drifts, disturbances, and wafer warpages, real-time correction of the bake-plate temperatures to achieve uniform wafer temperature at steady state is not possible in current baking systems. Any correction is done based on run-to-run control techniques which depends on the sampling frequency of the wafers. Our approach is real-time and can correct for any variations in the desired steady-state wafer temperature. Experimental results demonstrate the feasibility of the approach.
engineering, manufacturing, electrical & electronic,physics, condensed matter, applied