Abstract:A coupled electrical-thermal cosimulation with consideration of the temperature dependence of the metal-oxide-semiconductor (MOS) effect is performed for coaxial through silicon vias (C-TSVs) by using equivalent electrical and thermal circuit models. In the equivalent electrical circuit (EEC) model, the dependence of the MOS capacitance on bias voltage, operation frequency, oxide charge density, and temperature is studied, and further verified by measurement results from a previous publication. A 3-D equivalent thermal circuit (ETC) model with lump components, including thermal resistance and thermal capacitance analytically calculated from the geometry and material parameters of C-TSVs, is proposed for transient thermal simulation. The accuracy of the EEC and ETC models is verified by comparisons with full-wave simulations. Transient electrical-thermal co-simulation is performed for the C-TSVs with the EEC and ETC models. Results reveal that the temperature dependence of depletion width and corresponding MOS capacitance leads to considerable variations in the S-parameters of C-TSVs.

Different scenarios for estimating coupling capacitances of through silicon via (TSV) arrays

Electrical Characterization of Through-Silicon Vias (TSV) with Different Physical Configurations

Capacitive coupling analysis of TSV array in 3D packaging

Coupling capacitance extraction in through-silicon via (TSV) arrays

Electrothermal modelling of through silicon via (TSV) interconnects

Electrothermal Effects in High Density Through Silicon Via (tsv) Arrays

Modeling of a Pair of Annular Through Silicon Vias (TSV)

Frequency- and temperature-dependent modeling of coaxial through-silicon vias for 3-D ICs

Sensitivity analysis of through-silicon via (TSV) interconnects for 3-D ICs

Electromagnetic Compatibility-Oriented Study on Through Silicon Single-Walled Carbon Nanotube Bundle Via (TS-SWCNTBV) Arrays

Electrothermal modeling of coaxial through silicon via (TSV) for three-dimensional ICs

Transmission Characteristics Of A Coaxial Through-Silicon Via (C-Tsv) Interconnect

Multi-physics characterization of through silicon vias (TSV) in the presence of a periodic EMP

Multiphysics Characterization of Polymer‐filled Through‐silicon Vias (pf‐tsvs) for Three‐dimensional Integration

Analytical Model of the Coupling Capacitance Between Cylindrical Through Silicon Via and Horizontal Interconnect in 3D IC.

Electromagnetic Noise Coupling Analysis of TSV Array by Using Cylindrical Mode Expansion Method

Electrothermal investigation on through silicon multi-walled carbon nanotube via interconnects

Electrical–Thermal Cosimulation of Coaxial TSVs with Temperature-Dependent MOS Effect Using Equivalent Circuit Models

Compact Wideband Equivalent-Circuit Model for Electrical Modeling of Through-Silicon Via

Multi-physics modeling of through-silicon vias with equivalent-circuit approach

Analysis of Multiple Vias Coupling in Silicon Interposer by Using Cylindrical Mode Expansion Method