Method for preparing surface conduction electron emission film in W-Si-N nanometer diphase structure

Luping Liu,Lingzhi Ma,Yanhui Shi,Zhongxiao Song,Huiyan Wu,Shengli Wu,Siliang Xiong,Kewei Xu,Qingwen Yue
2010-01-01
Abstract:The invention relates to surface conduction electron emission film materials and discloses a method for preparing a surface conduction electron emission film in a W-Si-N nanometer diphase structure. The method comprises the following steps of: taking glass as a substrate in an N2/Ar mixed gas atmosphere, meanwhile, carrying out reaction magnetron sputtering on a W target and a Si target, and depositing to generate the surface conduction electron emission film in the W-Si-N nanometer diphase structure with a WNX conductive phase and a SiNX insulation phase.
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