Abstract:Flexible field emission (FE) arrays have a wide range of applications in next generation low-cost, lightweight and wearable electronics, roll-up displays, and large-area circuits on curved objects, yet the growth of tapered, high-quality single-crystalline nanostructure-based emitters on flexible substrates with superior FE properties remains challenging and related work is limited. On the other hand, our recent studies have shown that silicon carbide (SiC) 1D nanostructures could meet nearly any stringent requirement for an ideal FE emitter. In this contribution, we report the growth of quasi-aligned, single-crystalline n-type doped (N-doped) 3C-SiC nanoneedles (3C-SiCNNs) on highly flexible carbon fabric via the catalyst assisted pyrolysis of polysilazane. The as-synthesized SiCNNs possess a tapered structure with tiny clear tips with sizes of several to tens of nanometers. The fabricated 3C-SiCNNs have extremely low emission turn-on fields (E-on) in the range of 0.5-1.6 V mu m(-1) with an average of 1.1 V mu m(-1), which is comparable to the lowest value ever reported for 1D nanostructure emitters that, however, are grown on rigid substrates. Specifically, our SiCNN arrays on carbon fabric are mechanically and electrically robust, and can withstand mechanical bending up to 500 times and still retain excellent FE performance with E-on of similar to 1.1 V mu m(-1). The field-enhancement factor has been calculated to be 6.5 x 10(3). The superior FE properties can be attributed to the significant enhancements of the tapered unique morphology and N-doping of the SiCNNs. Calculations based on local density functional theory suggest that nitrogen dopants in the 3C-SiC nanostructure could favor a more localized impurity state near the conduction band edge, which improves the electron field emission. We strongly believe that the present work will provide a new insight into the fabrication of flexible field emission arrays with ultralow turn-on fields enhanced by both shape and doping.

The screen printed nano-SiC film for field emission

Patterned Uniformly Orientated Silicon Nanocrystallite Films and Efficient Field Emission Characteristics

Field Emission from Silicon Nanocrystallite Films with Compact Alignment and Uniform Orientation

Application of Printed Nanocrystalline Diamond Film for Electron Emission Cathode

Electron Field Emission Characteristics from Single-crystal Silicon Nanoarrays Fabricated by Direct Lithography with Nanosphere Mask

Fabrication Of Field Emission Cathode By Spraying Multiwalled Carbon Nanotubes On Screen Printed Substrate

Preparation method of surface conduction electron-emitter film with Nb-Si-N nanometer bi-phase structure

Growth Of N-Type 3c-Sic Nanoneedles On Carbon Fabric: Toward Extremely Flexible Field Emission Devices

Synthesis of Large-Area Single-Walled Carbon Nanotube Films on Glass Substrate and Their Field Electron Emission Properties

Preparation, superior field emission properties and first principles calculation of electronic structure of SiC nanowire arrays on Si substrate

Field Emission Study Of Sic Nanowires/Nanorods Directly Grown On Sic Ceramic Substrate

Study on field emission characteristics of a carbon nanotube electrode embedded in glass

Growth of Tapered SiC Nanowires on Flexible Carbon Fabric: Toward Field Emission Applications

Stable Field Emission from Vertically Oriented SiC Nanoarrays

Field Emission from Nonaligned SiC Nanowires

Carbon-nanotube Based Paste for Field Emission Display Application

The synthesis of vertically oriented carbon nanosheet-carbon nanotube hybrid films and their excellent field emission properties

The Fabrication and Operation of Fully Printed Carbon Nanotube Field Emission Displays

Fabrication and field emission property of a Si nanotip array

Field electron emission from ultra-high density Si nanotip arrays

Uniform carbon nanoflake films and their field emissions