One-Step Synthesis of Metal/Semiconductor Heterostructure NbS2/MoS2
Qundong Fu,Xiaowei Wang,Jiadong Zhou,Juan Xia,Qingsheng Zeng,Danhui Lv,Chao Zhu,Xiaolei Wang,Yue Shen,Xiaomin Li,Younan Hua,Fucai Liu,Zexiang Shen,Chuanhong Jin,Zheng Liu
DOI: https://doi.org/10.1021/acs.chemmater.7b05117
IF: 10.508
2018-01-01
Chemistry of Materials
Abstract:Chemical vapor deposition (CVD) has proven its surpassing advantages, such as larger scale, interlayer orientation control, and clean interface, in the synthesis of transitional metal dichalcogenide (TMDC) semiconductor/semiconductor van der Waals (vdW) heterostructures. However, it is suffering problems of high melting points and low chemical reactivity of metal oxide feedstocks in the preparation of high-quality metal/semiconductor (M/S) TMDC vdW heterostructures. Here, for the first time, we report the synthesis of the M/S TMDC vdW heterostructure NbS2/MoS2 via a one-step halide-assisted CVD method, which effectively overcomes the drawbacks of metal oxide precursors. This one-step method provides the high quality and clean interface of the NbS2/MoS2 heterostructure, which has been proved by the transmission electron microscopy characterization. A mechanism that MoS2 finishes the growth first and subsequently serves as a superior substrate for the growth of NbS2 is proposed. This novel method will open up new opportunities in the syntheses of other M/S TMDC vdW heterostructures and will facilitate the research of the TMDC M/S interface.