Abstract:Flexible field emission (FE) arrays have a wide range of applications in next generation low-cost, lightweight and wearable electronics, roll-up displays, and large-area circuits on curved objects, yet the growth of tapered, high-quality single-crystalline nanostructure-based emitters on flexible substrates with superior FE properties remains challenging and related work is limited. On the other hand, our recent studies have shown that silicon carbide (SiC) 1D nanostructures could meet nearly any stringent requirement for an ideal FE emitter. In this contribution, we report the growth of quasi-aligned, single-crystalline n-type doped (N-doped) 3C-SiC nanoneedles (3C-SiCNNs) on highly flexible carbon fabric via the catalyst assisted pyrolysis of polysilazane. The as-synthesized SiCNNs possess a tapered structure with tiny clear tips with sizes of several to tens of nanometers. The fabricated 3C-SiCNNs have extremely low emission turn-on fields (E-on) in the range of 0.5-1.6 V mu m(-1) with an average of 1.1 V mu m(-1), which is comparable to the lowest value ever reported for 1D nanostructure emitters that, however, are grown on rigid substrates. Specifically, our SiCNN arrays on carbon fabric are mechanically and electrically robust, and can withstand mechanical bending up to 500 times and still retain excellent FE performance with E-on of similar to 1.1 V mu m(-1). The field-enhancement factor has been calculated to be 6.5 x 10(3). The superior FE properties can be attributed to the significant enhancements of the tapered unique morphology and N-doping of the SiCNNs. Calculations based on local density functional theory suggest that nitrogen dopants in the 3C-SiC nanostructure could favor a more localized impurity state near the conduction band edge, which improves the electron field emission. We strongly believe that the present work will provide a new insight into the fabrication of flexible field emission arrays with ultralow turn-on fields enhanced by both shape and doping.

Microstructural and Electron-Emission Characteristics of Nb-Si-N Films in Surface-Conduction Electron-Emitter Display

Surface-conduction electron emission from Nb-Si-N thin film

W-Si-N Nan-Crystal As Electron Emitter Applied in SED

Electroluminescence from Si Nanocrystal/c-Si Heterojunction Light-Emitting Diodes

Patterned Uniformly Orientated Silicon Nanocrystallite Films and Efficient Field Emission Characteristics

Field Emission from Silicon Nanocrystallite Films with Compact Alignment and Uniform Orientation

Preparation method of surface conduction electron-emitter film with Nb-Si-N nanometer bi-phase structure

Potential Surface-Conduction Electron Emission From Zno Thin Film

Controlled Growth and Field-Emission Properties of NbSe2 Micro/nanostructured Films.

Controlled growth and field-emission properties of NbSe 2 micro/nanostructured films

Controlling the growth and field emission properties of silicide nanowire arrays by direct silicification of Ni foil.

Preparation, superior field emission properties and first principles calculation of electronic structure of SiC nanowire arrays on Si substrate

Electroluminescence of Silicon-Rich Silicon Nitride Light-Emitting Devices

Synthesis and Luminescence Characteristics of Nitride Ca1.4al2.8si9.2n16:Ce3+, Li+ for Light-Emitting Devices and Field Emission Displays

Light Emitting Devices Based on Nanocrystalline-Silicon Multilayer Structure

Surface Conduction Electron Emission from ZnO Film.

NbN thin films grown on silicon by molecular beam epitaxy for superconducting detectors

Synthesis Of High Quality N-Type Cdse Nanobelts And Their Applications In Nanodevices

Field Emission Properties of Nanocrystalline and Amorphous Silicon Carbon Nitride Prepared from Microwave Plasma Chemical Vapor Deposition

Strong visible electroluminescence from silicon nanocrystals embedded in a silicon carbide film

Growth Of N-Type 3c-Sic Nanoneedles On Carbon Fabric: Toward Extremely Flexible Field Emission Devices