Abstract:In this paper, we report insights into the local atomic and electronic structure of NiCo2O4 epitaxial thin films and its correlation with electrical, optical, and magnetic properties. We grew structurally well-defined NiCo2O4 epitaxial thin films with controlled properties on MgAl2O4 (001) substrates using pulsed laser deposition. Films grown at low temperatures (<400 degrees C) exhibit a ferrimagnetic and metallic behavior, while those grown at high temperatures are nonmagnetic semiconductors. The electronic structure and cation local atomic coordination of the respective films were investigated using a combination of resonant photoemission spectroscopy, x-ray absorption spectroscopy, and ab initio calculations. Our results unambiguously reveal that the Ni3+ valence state promoted at low growth temperature introduces delocalized Ni 3d-derived states at the Fermi level (E-F), responsible for the metallic state in NiCo2O4, while the Co 3d-related state is more localized at higher binding energy. In the semiconducting films, the valence state of Ni is lowered and similar to +2. Further structural and defect chemistry studies indicate that the formation of oxygen vacancies and secondary CoO phases at high growth temperature are responsible for the Ni2+ valence state in NiCo2O4. The Ni 3d-related state becomes localized away from EF, opening a band gap for a semiconducting state. The band gap of the semiconducting NiCo2O4 is estimated to be <0.8 eV, which is much smaller than the quoted values in the literature ranging from 1.1 to 2.58 eV. Despite the small band gap, its optical transition is d-d dipole forbidden, and therefore, the semiconducting NiCo2O4 still shows reasonable transparency in the infrared-visible light region. The present insights into the role of Ni3+ in determining the electronic structure and defect chemistry of NiCo2O4 provide important guidance for use of NiCo2O4 in electrocatalysis and opto-electronics.

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