Abstract:As electronics become lighter, shorter and more complex, the potential damage to integrated circuits (ICs) from electrostatic discharge (ESD) becomes more severe. In many applications, high voltages will result in high electric fields and high current densities in miniaturized components, which can lead to gate oxide breakdown of circuit components and thermal damage in ICs. Therefore, ESD protection circuits are added inside the electronic product in order to prevent the above damage, but the area of the protection cell should not be too large, otherwise a large proportion of the IC manufacturing cost is spent on the protection circuit. In this paper, we investigate how to improve the ESD protection of the designed high-voltage components through TSMC’s 0. 1S-micron BCD HV process. The sample structures of this work all use high-voltage N-channel laterally diffused MOSFETs (LDMOS), and the I/O protection components can be improved by this protection architecture. First, the ESD robustness of the device is enhanced by embedding a Schottky diode in the bulk end of the nLDMOS. The Schottky diode is parasitized horizontally at the body terminal. Since the parasitic Schottky diode is at the body electrode of the device, the parasitic BJT capability is enhanced, making it easier to trigger the conductivity of the device. Therefore, the new components $\mathrm{V}_{\mathrm{t}i}$ and $\mathrm{V}_{\mathrm{h}}$ values decrease (because the horizontal parasitic Schottky is reversed so the decreasing is obvious), so that the high-voltage ESD protection components have a better performance under ESD events, this design also makes the anti-ESD capacity $\mathrm{I}_{\mathrm{t}2}$ significantly increased. In the case of the body-end horizontal (reversed) embedded Schottky element, the largest $\mathrm{I}_{\mathrm{t}2}$ is found on the $\mathrm{R}\mathrm{e}\mathrm{f}_{-}8\mathrm{S}_{-}\mathrm{B}_{-}8$ device, whose $\mathrm{I}_{\mathrm{t}2}$ improvement rises up to 4. 529A, an significant increase of 244.41% was achieved as compared with the reference sample.

Vertical Tsv-Like Diode Esd Protection

FOD Based ESD Protection Devices in Deep Sub-micron Technology

New Electrostatic Discharge Protection Device for VBO High Speed Chip

Enhanced ESD-Capability of High-Voltage 32 V N-Channel LDMOSs with the Body-Side Hetero-Junction Structure

Vertical Silicon-Controlled Rectifier for ESD Protection under 28nm Ps Process

Whole-Chip ESD Protection Design for Deep Submicron Mix-Signal CMOS VLSI

Evaluation of RF electrostatic discharge (ESD) protection in 0.18-μm CMOS technology

A Study of Process/device/layout Co-Design for Full-Chip ESD Protection in BCD Technology

A Novel Dual-Directional DTSCR in Twin-Well Process for Ultra-Low-voltage ESD Protection

A Pad-Oriented Novel Electrostatic Discharge Protection Structure For Mixed-Signal ICs

A novel gate-suppression technique for ESD protection.

Investigation on Bi-directional SCR ESD Protection Devices in a 0.18 μm RF CMOS Process

Improvement on Diode String Structure for 65-Nm RF ESD Protection

ESD-Performance Enhancement of Circular Ultra-High-Voltage 300-V N-Channel Lateral-Diffused MOSFETs by Source/Drain Embedded Schottky Diodes

Robust and area-efficient nLDMOS-SCR with waffle layout structure for high-voltage ESD protection

An Investigation on Capacitance-Trigger ESD Protection Devices for High Voltage Integrated Circuits

Nano enabled 3D integration of on-chip ESD protection for ICs

Whole Chip Esd Protection for 2.4 Ghz Lna

A Novel and Powerful TCAD Methodology to Evaluate Performance of ESD Protection Devices

System Efficient ESD Design of IO ESD Protection

A Modified LDMOS Device with Improved ESD Protection Performance