Abstract:Measurement-based electrical characterization of through silicon via (TSV) and redistribution layer (RDL) is of great importance for both fabrication process and system design of 3D integration. This paper presents the electrical measurements and analysis of TSV and double-sided RDL test structures, from DC to high frequency up to 40GHz. TSV shows great dependence of DC resistance and leakage current on fabrication process. An inverse V-shaped C-V curve is presented between adjacent TSVs in N-type silicon substrate, from -10V to 10V. In the high frequency characterization, two methods are proposed and applied to extract resistance and inductance of a single grounded TSV. Individual transmission loss of TSV, RDLs on top and bottom surface of silicon substrate are calculated, and corresponding circuit parameters thereof are extracted to characterize their electrical properties precisely. Display Omitted Measure TSVs and metal lines at DC and high frequency up to 40GHzApply two methods to extract resistance and inductance of single TSVSeparate individual transmission loss of TSV and metal line from test structuresExtract circuit parameters of TSV and metal lines up to 40GHz

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Electrothermal modelling of through silicon via (TSV) interconnects

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Sensitivity analysis of through-silicon via (TSV) interconnects for 3-D ICs

Electrothermal modelling and characterisation of submicron through-silicon carbon nanotube bundle vias for three-dimensional ICs

Full RLGC Model Extraction of Through Silicon Via (TSV) with Charge Distribution Effects

Compact Wideband Equivalent-Circuit Model for Electrical Modeling of Through-Silicon Via

Modeling and Electromagnetic Analysis of Multilayer Through Silicon Via Interconnect for 3D Integration

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Multi-physics modeling of through-silicon vias with equivalent-circuit approach

Measurement-based electrical characterization of through silicon vias and transmission lines for 3D integration

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Electrical–Thermal Cosimulation of Coaxial TSVs with Temperature-Dependent MOS Effect Using Equivalent Circuit Models

Signal Integrity Analysis of Through-Silicon Via Based 3D Integrated Circuit