Impurity Levels and Bandedge Electronic Structure in As-Grown Arsenic-Doped HgCdTe by Infrared Photoreflectance Spectroscopy
Jun Shao,Xiang Lue,Shaoling Guo,Wei Lu,Lu Chen,Yanfeng Wei,Jianrong Yang,Li He,Junhao Chu
DOI: https://doi.org/10.1103/physrevb.80.155125
2009-01-01
Abstract:The nature of bandedge electronic structure represents a theoretically interesting and technologically important question in arsenic-doped narrow-gap HgCdTe. In this study, temperature-dependent (11-290 K) photo-reflectance (PR) measurements were carried out in midinfrared spectral region on three as-grown arsenic (As)-doped narrow-gap Hg1-xCdxTe (x=0.317, 0.287, and 0.310, respectively) samples prepared by molecular-beam epitaxy. Low-energy photomodulated Fabry-Perot interference (FPI) and high-energy Franz-Keldysh oscillation (FKO) were analyzed and bandedge PR features were discriminated. Curve fittings of the bandedge PR features were performed, band-gap and below-gap PR processes were identified, and critical energies were determined. While no obvious FPI and FKO could be identified for the sample with a doping level of about 10(18) cm(-3), they were strong for the doping levels of about 10(16)-10(17) cm(-3), and got enhanced with temperature. Detailed analyses indicated that the below-gap PR features are linked to donor-acceptor, conduction-bandacceptor, and donor-valence-band transitions. The average energy levels of the donor and acceptor states were evaluated to be about 17 +/- 1 meV and 27 +/- 3 meV below conduction-band minimum, and 14 +/- 1 meV above valence-band maximum at 77 K, and the origins were assigned to As-Hg, Te-Hg, and V-Hg, respectively. The effect of possible deep-level impurities were also discussed, and a value of about 69 meV above the valence-band maximum was assumed preliminarily for the second level of VHg acceptor (V-Hg(II)) and 42 meV below the conduction-band minimum for As tetramer [(As-Hg-A(si))(dimmer)](3). The evolution of PR critical energies with temperature was compared with an empirical formula for HgCdTe band-gap energy, and the implication of "effective band gap" was evidenced for the empirical formula. Finally, a schematic diagram was drawn for the bandedge electronic structure of the as-grown As-doped narrow-gap HgCdTe epilayers.