Abstract:GaSb has been studied as a new alternative substrate for growing HgCdTe via molecular beam epitaxy (MBE). Cross-sectional transmission electron microscopy (TEM) studies indicate that MBE-grown CdTe buffer layers on GaSb have much lower misfit dislocation density than comparable layers grown on GaAs. The MBE-grown mid-wave infrared (MWIR) HgCdTe layers on GaSb substrates present material quality comparable to those grown on GaAs substrates, which is one of the state-of-the-art alternative substrates currently used to grow HgCdTe for the fabrication of MWIR detectors and focal plane arrays. Typically, HgCdTe materials grown on GaSb are found to have a rocking curve (double crystal x-ray diffraction) full width at half maximum of ~122 arcsec and an etch pit density of ~mid-106 cm–2. Electron backscatter diffraction mapping shows that the lattice misorientation/misfit dislocations near the HgCdTe/CdTe interface are negligible for GaSb substrates in comparison to GaAs substrates, and that the material quality of the HgCdTe layer on GaSb is determined primarily by the material quality of the CdTe buffer layer. These preliminary results are very encouraging considering that this is a relatively recent research effort, and higher quality MBE-grown HgCdTe materials are expected on GaSb substrates with further optimization of HgCdTe growth conditions as well as further improvements in the growth conditions for CdTe buffer layers.

Research activities in MBE HgCdTe at SITP

Progress in MBE growth of HgCdTe @ SITP

MBE HgCdTe on Alternative Substrates for FPA Applications

MBE HgCdTe on Si and GaAs Substrates

The Study of HgCdTe on Si by MBE

Molecular Beam Epitaxy of HgCdTe and Related Devices:towards to the 3rd Generation IRFPAs

Molecular Beam Epitaxy and Characterizations of PbTe Grown on GaAs(211) Substrates Using CdTe/ZnTe Buffers

MBE HgCdTe:A Challenge to the Realization of Third Generation Infrared FPAs

Observation of Thermal-Misfit Strain Relaxation in A Pbte Semiconductor Grown on Cd0.96zn0.04te(111)

In Doping on MBE Grown HgCdTe

Research on PbTe/Pb_(1-x)Sr_xTe Multi-Quantum Well Mid-Infrared Light Emitting Device

Mbe Growth Of Hgcdte And Device Applications

Arsenic doping and activations in HgCdTe by MBE

Optical and Electronic Characterization on HgCdTe Materials

P-TYPE ACTIVATION RESEARCH OF As-DOPING IN MBE HgCdTe FILMS

MBE flexible technology for HgCdTe manufacturing

Molecular-beam Epitaxy-Grown HgCdTe Infrared Detector: Material Physics, Structure Design, and Device Fabrication

Composition Control and Surface Defects of MBE-grown HgCdTe

Mbe Growth of Si/CdTe( 211 ) Composite Substrates

Resonant Nature of Intrinsic Defect Energy Levels in Pbte Revealed by Infrared Photoreflectance Spectroscopy

MBE Growth of Mid-wave Infrared HgCdTe Layers on GaSb Alternative Substrates