Abstract:A study has been made of the electrical behaviour of In-doped metal organic vapour phase epitaxy (MOVPE) layers of Hg(1-x)Cd(x)Te grown by the interdiffused multilayer process (imp) in order to establish the factors needed to obtain uniform extrinsic n-type layers with high electrical activity and mobility. Layers with x between 0.2 and 0.3 were grown on (100) CdTe and CdTeSe at 360-degrees-C using di-isopropyltelluride (DIPT) and doped with trimethylindium (TMIn) in two ways, depending on In concentration, [In]. For [In] > 1 x 10(17) cm-3 layers were doped with TMIn on the CdTe part of the imp cycle while for [In] in the range 1 X 10(15) to l X 10(17) cm-3 the TMIn memory of the growth system was used, resulting in doping on the HgTe part of the imp cycle because of a greater efficiency of incorporation. In profiles, which were determined by secondary-ion mass spectrometry (SIMS), are shown to depend on doping process due to TMIn partial pressure variations from adsorption effects. The layers, which were capped with CdTe to prevent inadvertent post-growth annealing from affecting the electrical activity of the In, were p type when undoped. On doping, as-grown layers become n type at 77 K at [In] approximately 1 x 10(16) cm-3 due to the concentration of donors exceeding the background concentration of Hg acceptor vacancies. The percentage of In electrically active is 33 % at [In] less-than-or-equal-to 2 x 10(18) cm-3 and 15-20 % at higher [In]. The 77 K Hall mobilities of layers, both p and n type, are low when [In] > 1 x 10(16) cm-3, probably because of high levels of compensation. Low temperature annealing to remove Hg vacancies, both ex situ and in situ, significantly improves the electrical properties. Electrical activity of the In increases to 100 % over the [In] range 1 x 10(15) to 2 x 10(18) cm-3 and to 40 % at higher concentrations. 77 K Hall mobility of the n-type layers increases and shows a dependence on carrier concentration and x consistent with lightly compensated material. Results are in agreement with In doping introducing autocompensating centres which anneal out on a low-temperature Hg-rich anneal.

In Doping on MBE Grown HgCdTe

Arsenic doping and activations in HgCdTe by MBE

Control of the Electrical Properties of In-doped HgCdTe Grown by MOVPE for IR Detector Applications

The Growth and Properties of In-Doped Metalorganic Vapor-Phase Epitaxy Interdiffused Multilayer Process (Hgcd)te

The Acceptor Properties of Un-Intentionally Doped P-Type Mbe-Grown Hg1-Xcdxte

As-Doping Hgcdte By Mbe

Characteristics of Doped Indium in Cd0.9Zn0.1Te Grown by the Bridgman Method

MBE HgCdTe on Si and GaAs Substrates

CdZnTe Energy Levels Induced by Doping of Indium

Growth of in Doped Cdznte by Vertical Bridgman Method and the Effect of in on the Crystal Properties

MBE HgCdTe on Alternative Substrates for FPA Applications

Molecular Beam Epitaxy of HgCdTe and Related Devices:towards to the 3rd Generation IRFPAs

Research of Arsenic Doping in MBE HgCdTe

MBE HgCdTe:A Challenge to the Realization of Third Generation Infrared FPAs

HgCdTe photodiode arrays passivated by MBE in-situ grown CdTe film

Research activities in MBE HgCdTe at SITP

P-TYPE ACTIVATION RESEARCH OF As-DOPING IN MBE HgCdTe FILMS

Optical and Electronic Characterization on HgCdTe Materials

Study Of Impurity States In P-Type Hg1-Xcdxte Using Far-Infrared Spectroscopy

Ag doping of p-type HgCdTe grown by LPE

Influence of Indium Doping on Acceptor Activation Energy in P-Type Al_xGa_(1-x)N