Abstract:A study has been made of the electrical behaviour of In-doped metal organic vapour phase epitaxy (MOVPE) layers of Hg(1-x)Cd(x)Te grown by the interdiffused multilayer process (imp) in order to establish the factors needed to obtain uniform extrinsic n-type layers with high electrical activity and mobility. Layers with x between 0.2 and 0.3 were grown on (100) CdTe and CdTeSe at 360-degrees-C using di-isopropyltelluride (DIPT) and doped with trimethylindium (TMIn) in two ways, depending on In concentration, [In]. For [In] > 1 x 10(17) cm-3 layers were doped with TMIn on the CdTe part of the imp cycle while for [In] in the range 1 X 10(15) to l X 10(17) cm-3 the TMIn memory of the growth system was used, resulting in doping on the HgTe part of the imp cycle because of a greater efficiency of incorporation. In profiles, which were determined by secondary-ion mass spectrometry (SIMS), are shown to depend on doping process due to TMIn partial pressure variations from adsorption effects. The layers, which were capped with CdTe to prevent inadvertent post-growth annealing from affecting the electrical activity of the In, were p type when undoped. On doping, as-grown layers become n type at 77 K at [In] approximately 1 x 10(16) cm-3 due to the concentration of donors exceeding the background concentration of Hg acceptor vacancies. The percentage of In electrically active is 33 % at [In] less-than-or-equal-to 2 x 10(18) cm-3 and 15-20 % at higher [In]. The 77 K Hall mobilities of layers, both p and n type, are low when [In] > 1 x 10(16) cm-3, probably because of high levels of compensation. Low temperature annealing to remove Hg vacancies, both ex situ and in situ, significantly improves the electrical properties. Electrical activity of the In increases to 100 % over the [In] range 1 x 10(15) to 2 x 10(18) cm-3 and to 40 % at higher concentrations. 77 K Hall mobility of the n-type layers increases and shows a dependence on carrier concentration and x consistent with lightly compensated material. Results are in agreement with In doping introducing autocompensating centres which anneal out on a low-temperature Hg-rich anneal.

The Acceptor Properties of Un-Intentionally Doped P-Type Mbe-Grown Hg1-Xcdxte

As-Doping Hgcdte By Mbe

In Doping on MBE Grown HgCdTe

Study Of Impurity States In P-Type Hg1-Xcdxte Using Far-Infrared Spectroscopy

Optical and Electronic Characterization on HgCdTe Materials

Control of the Electrical Properties of In-doped HgCdTe Grown by MOVPE for IR Detector Applications

MBE HgCdTe on Alternative Substrates for FPA Applications

Magnetic field dependence of Hall coefficient and conductivity of p-type Hg1-xCdxTe grown by MBE

Arsenic doping and activations in HgCdTe by MBE

Research of Arsenic Doping in MBE HgCdTe

Evaluation Of Densities And Mobilities For Heavy And Light Holes In P-Type Hg1-Xcdx Molecular Beam Epitaxy Films From Magnetic-Field-Dependent Hall Data

PHOTOLUMINESCENCE STUDY ON HG1-XCDXTE THIN-FILM IMPLANTED WITH AS ION

Study of Anneal Technology for HgCdTe at Hg-rich Condition

In-situ ellipsometric study on composition-dependent short-wave HgCdTe in the process of molecular beam epitaxy growth

Ag doping of p-type HgCdTe grown by LPE

Thermoelectric Properties of Homogeneously and Non-Homogeneously Doped CdTe15/16M1/16 (M=N, P, As, Sb) and Cd15/16TeM1/16 (m=na, K, Rb, Cs)

Composition Control and Surface Defects of MBE-grown HgCdTe

Study of Si-substrate HgCdTe Electrical Properties

Characterization of Hgmnte Crystals Grown by Vertical Bridgman Method

Realizing High Thermoelectric Performance and Thermal Stability in CuInTe2 Through Heavy Dose Mg Doping

P-TYPE ACTIVATION RESEARCH OF As-DOPING IN MBE HgCdTe FILMS