Abstract:This paper systematically reviews the progress on the HgCdTe (MCT) material deposition via molecular-beam epitaxy (MBE) and previously reported atomistic approaches used to model the MCT epitaxy. The structure design and fabrication of the infrared (IR) detection systems require highly crystalline MCT films. The state-of-the-art of the MBE growth processes of Hg1−xCdxTe films over Si, GaAs, GaSb, and CdZnTe substrates are reported here from an atomistic simulation perspective. The most advanced in-house-developed kinetic Monte Carlo (kMC) technique, coupled with the geometry of the MBE reactor (implemented in the TNL-EpiGrowTM simulator) is exploited to reproduce real-time MBE experiments. The ability to track each atom involved in the adsorption, diffusion, and desorption processes over the lattice provides deeper insights. The ability to map various defects quantitatively and qualitatively during the growth process in a layer-by-layer and island mode helps to provide a proper understanding of their formation. The TNL-EpiGrowTM simulator provides an innovative and cost-effective solution for the epitaxial growth processes associated with MBE, CVD, and MOCVD reactors for most semiconductors. The types of defects, their position over the lattice, layer-by-layer strain, surface roughness, lattice parameters are easily extractable and provide an unmatched solution. However, it is very difficult to realize similar solutions through sophisticated instruments. Si, GaAs, GaSb, and CdZnTe substrates have been used to reproduce the MBE process of Hg1−xCdxTe (x ≈ 0.55). The vacancies and dislocation densities are reported here to characterize the cases of MCT epitaxy on the four different substrates. The growth rates of CdTe and MCT have been benchmarked against the experimental data (Pacuski et al. in Cryst Growth Des 17(6):2987, 2017; Wijewamauriya et al. in Appl Phys Lett 51(24):2025, 1987). The output results revealed that CdZnTe is the most attractive substrate choice but, due to its technological challenges, GaSb can replace it and is the most suitable option for the growth of Hg1−xCdxTe as compared to Si and GaAs substrates under similar conditions. The results reported here also support the experimental findings (Gu et al. in J Cryst Growth 468:216, 2017). The dislocations and vacancies generated in the GaSb substrate are comparable to those in the CdZnTe substrate.

Mbe Growth Of Hgcdte And Device Applications

Progress in MBE growth of HgCdTe @ SITP

MBE flexible technology for HgCdTe manufacturing

MBE HgCdTe on Si and GaAs Substrates

Growth of (111)cdte on a Buffer Layer of (100)znse by MBE

Composition Control and Surface Defects of MBE-grown HgCdTe

REAL-TIME MONITORING OF GROWTH PARAMETERS OF MBE GROWN HgCdTe

Surface Defects on Mbe Grown Hgcdte

Molecular Beam Epitaxial Growth of 3-in Hgcdte Wafer

MBE HgCdTe:A Challenge to the Realization of Third Generation Infrared FPAs

MBE HgCdTe on Alternative Substrates for FPA Applications

MBE Growth of Mid-wave Infrared HgCdTe Layers on GaSb Alternative Substrates

Molecular Beam Epitaxy of Hgcdte on (211)B Cdznte

Dislocation Density of MBE Grown HgCdTe on ZnCdTe Substrates

Molecular Beam Epitaxy of HgCdTe and Related Devices:towards to the 3rd Generation IRFPAs

Defect Analysis of MBE Reactor-Grown HgCdTe on Si, GaAs, GaSb, and CZT Substrates Through the TNL-Epigrow Simulator

Mbe Growth of Si/CdTe( 211 ) Composite Substrates

Comparison Of Surface Morphologies Of Hgcdte Films Grown By Mbe And Lpe

Molecular-beam Epitaxy-Grown HgCdTe Infrared Detector: Material Physics, Structure Design, and Device Fabrication

MBE growth of (111) CdTe on Zn-stabilized and Se-stabilized (100) ZnSe

The Study of HgCdTe on Si by MBE