Abstract:In this paper, we present a study on the direct growth of Hg0.7Cd0.3Te thin films on layered transparent van der Waals mica (001) substrates through weak interface interaction through molecular beam epitaxy. The preferred orientation for growing Hg0.7Cd0.3Te on mica (001) substrates is found to be the (111) orientation due to a better lattice match between the Hg0.7Cd0.3Te layer and the underlying mica substrate. The influence of growth parameters (mainly temperature and Hg flux) on the material quality of epitaxial Hg0.7Cd0.3Te thin films is studied, and the optimal growth temperature and Hg flux are found to be approximately 190 °C and 4.5 × 10−4 Torr as evidenced by higher crystalline quality and better surface morphology. Hg0.7Cd0.3Te thin films (3.5 μm thick) grown under these optimal growth conditions present a full width at half maximum of 345.6 arc sec for the X-ray diffraction rocking curve and a root-mean-square surface roughness of 6 nm. However, a significant number of microtwin defects are observed using cross-sectional transmission electron microscopy, which leads to a relatively high etch pit density (mid-107 cm−2) in the Hg0.7Cd0.3Te thin films. These findings not only facilitate the growth of HgCdTe on mica substrates for fabricating curved IR sensors but also contribute to a better understanding of growth of traditional zinc-blende semiconductors on layered substrates.

Comparison Of Surface Morphologies Of Hgcdte Films Grown By Mbe And Lpe

Surface Defects on Mbe Grown Hgcdte

Growth of (111)cdte on a Buffer Layer of (100)znse by MBE

Mbe Growth Of Hgcdte And Device Applications

Composition Control and Surface Defects of MBE-grown HgCdTe

MBE Growth and Characterization of Strained Hg Te（111） Films on CdTe/GaAs

Study on Micro-Structural Properties of Pbte/Cd0.98zn0.02te (111) Hetero-System Grown by Molecular-Beam Epitaxy

Observation of regular defects formed on the surface of PbTe thin films grown by molecular beam epitaxy

MBE HgCdTe on Alternative Substrates for FPA Applications

Molecular Beam Epitaxy of Hgcdte on (211)B Cdznte

Study of Surface Defects Induced by Impurities from Mercury Source on MBE-grown HgCdTe Epilayers

Comparison of surface morphologies in GaN films grown by rf-MBE and MOCVD on vicinal sapphire (0001) substrates

Study of Growth of [111]-Oriented CdTe Thin Films by MBE

Growth and Characterization of Liquid-Phase Epitaxial Hg1-Xcdxte Films

Progress in MBE growth of HgCdTe @ SITP

Comparison of surface morphologies in GaN films grown by rf-MBE and MOCVD on vicinal sapphire (0 0 0 1) substrates

MBE HgCdTe on Si and GaAs Substrates

Dislocation Density of MBE Grown HgCdTe on ZnCdTe Substrates

Growth of Hg0.7Cd0.3Te on Van Der Waals Mica Substrates via Molecular Beam Epitaxy

Study of Surface Oxidation of PbTe Films

Influence of Surface Structures on Quality of CdTe(100) Thin Films Grown on GaAs(100) Substrates