Molecular Beam Epitaxial Growth of 3-in Hgcdte Wafer

L Chen,Y Wu,MF Yu,J Wu,YM Qiao,JR Yang,L He

DOI: https://doi.org/10.3321/j.issn:1001-9014.2002.01.016

2002-01-01

JOURNAL OF INFRARED AND MILLIMETER WAVES

Abstract:The recent results on molecular beam epitaxial growth of 3-in HgCdTe wafers were reported. The composition uniformity in the wafer was found to be 1.2 % in a diameter of 70 mm, corresponding to a deviation in cutoff wavelength of 0.1 mum at 80 K. By refining the growth conditions, the surface morphology was significantly improved. The defect density was reduced to below 300cm(-2), and the defect size was suppressed to be smaller than 10mum. The material quality can meet the requirements of FPA fabrications.