Study of Anneal Technology for HgCdTe at Hg-rich Condition

ZHANG Chuan-jie,YANG Jian-rong,WU Jun,WEI Yan-feng,HE Li
DOI: https://doi.org/10.3969/j.issn.1001-5078.2006.11.006
2006-01-01
Abstract:Hg-rich anneal technique of HgCdTe is studied in a vertical H_2-flow anneal equipment.After the Hg-rich annealing at 300℃ and the subsequent routine N type anneal,the arsenic atoms in Hg_(1-x)Cd_xTe samples doped in MBE process has been activated as acceptors.The activation is as same as that of the sample annealed by a sealed quartz ampoule as a contrast experiment.The surfaces of the annealed samples,including 3 inch Si substrate,have no any change comparing with the origin ones. The above results show that Hg-rich anneal technique in a vertical H_2-flow annealed system can be used for the heat treatment of large area,multi-layer,hetero-substrate HgCdTe epitaxial materials required by third-generation HgCdTe infrared focal plane array.
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