Abstract:The trend related to reach the high operating temperature condition (HOT, temperature, T > 190 K) achieved by thermoelectric (TE) coolers has been observed in infrared (IR) technology recently. That is directly related to the attempts to reduce the IR detector size, weight, and power dissipation (SWaP) conditions. The room temperature avalanche photodiodes technology is well developed in short IR range (SWIR) while devices operating in mid-wavelength (MWIR) and long-wavelength (LWIR) require cooling to suppress dark current due to the low energy bandgap. The paper presents research on the potential application of the HgCdTe (100) oriented and HgCdTe (111)B heterostructures grown by metal-organic chemical vapor deposition (MOCVD) on GaAs substrates for the design of avalanche photodiodes (APDs) operating in the IR range up to 8 µm and under 2-stage TE cooling (T = 230 K). While HgCdTe band structure with molar composition xCd < 0.5 provides a very favorable hole-to-electron ionization coefficient ratio under avalanche conditions, resulting in increased gain without generating excess noise, the low level of background doping concentration and a low number of defects in the active layer is also required. HgCdTe (100) oriented layers exhibit better crystalline quality than HgCdTe (111)B grown on GaAs substrates, low dislocation density, and reduction of residual defects which contribute to a background doping within the range ~1014 cm-3. The fitting to the experimentally measured dark currents (at T = 230 K) of the N+-ν-p-P+ photodiodes commonly used as an APDs structure allowed to determine the material parameters. Experimentally extracted the mid-bandgap trap concentrations at the level of 2.5 × 1014 cm-3 and 1 × 1015 cm-3 for HgCdTe (100) and HgCdTe (111)B photodiode are reported respectively. HgCdTe (100) is better to provide high resistance, and consequently sufficient strength and uniform electric field distribution, as well as to avoid the tunneling current contribution at higher bias, which is a key issue in the proper operation of avalanche photodiodes. It was presented that HgCdTe (100) based N+-ν-p-P+ gain, M > 100 could be reached for reverse voltage > 5 V and excess noise factor F(M) assumes: 2.25 (active layer, xCd = 0.22, k = 0.04, M = 10) for λcut-off = 8 μm and T = 230 K. In addition the 4-TE cooled, 8 μm APDs performance was compared to the state-of-the-art for SWIR and MWIR APDs based mainly on III-V and HgCdTe materials (T = 77-300 K).

Infrared Photoluminescence of Arsenic-Doped Hgcdte in A Wide Temperature Range of Up to 290 K

Impurity Levels and Bandedge Electronic Structure in As-Grown Arsenic-Doped HgCdTe by Infrared Photoreflectance Spectroscopy

Arsenic-doped Narrow-Gap HgCdTe Epilayers Studied by Infrared Modulation Spectroscopy

Evolution of Infrared Photoreflectance Lineshape with Temperature in Narrow-Gap HgCdTe Epilayers

Backside-Illuminated Infrared Photoluminescence and Photoreflectance: Probe of Vertical Nonuniformity of Hgcdte on Gaas

Fabrication and performances of arsenic-doped HgCdTe long-wavelength infrared photodiode arrays

Arsenic doping and activations in HgCdTe by MBE

PHOTOLUMINESCENCE STUDY ON HG1-XCDXTE THIN-FILM IMPLANTED WITH AS ION

Temperature Dependence of the Defect States in LWIR (100) and (111)B HgCdTe Epilayers for IR HOT Detectors

Cutoff Wavelength of Hg1-Xcdxte Epilayers by Infrared Photoreflectance Spectroscopy

Study of Anneal Technology for HgCdTe at Hg-rich Condition

Study Of Impurity States In P-Type Hg1-Xcdxte Using Far-Infrared Spectroscopy

Temperature dependence of photoluminescence from as-grown and plasma-etched InAs0.45P0.55/In0.68Ga0.32As0.45P0.55 strained single quantum well

Control of the Electrical Properties of In-doped HgCdTe Grown by MOVPE for IR Detector Applications

As-Doping Hgcdte By Mbe

Optical and Electronic Characterization on HgCdTe Materials

Effect of Donors and Acceptors on the Optical Properties of Cdgeas(2)

Modulation Mechanism of Infrared Photoreflectance in Narrow-Gap Hgcdte Epilayers: A Pump Power Dependent Study

Study of HgCdTe (100) and HgCdTe (111)B Heterostructures Grown by MOCVD and Their Potential Application to APDs Operating in the IR Range up to 8 µm

In-situ ellipsometric study on composition-dependent short-wave HgCdTe in the process of molecular beam epitaxy growth

Infrared Photoconductor Fabricated with A Molecular-Beam Epitaxially Grown Cdte/Hgcdte Heterostructure