Temperature Dependence of the Defect States in LWIR (100) and (111)B HgCdTe Epilayers for IR HOT Detectors
Krzysztof Murawski,K. Majkowycz,J. Sobieski,M. Kopytko,P. Martyniuk
DOI: https://doi.org/10.1007/s11664-024-11229-z
IF: 2.1
2024-07-03
Journal of Electronic Materials
Abstract:Abstract HgCdTe epilayers grown by chemical vapor deposition (MOCVD) on GaAs substrates operating in the long-wave infrared range were characterized by the photoluminescence (PL) method. Photodiode and photoconductor designs, both (100) and (111)B crystallographic, were analyzed. Spectral current responsivity ( R I ) and a PL signal approximated by a theoretical expression being the product of the density of states and the Fermi–Dirac distribution were used to determine the fundamental transition (energy gap, E g ). For all the samples, an additional deep-level-related transition associated with mercury vacancies (V Hg ) were observed. The energy distance of about 80 meV above the valence band edge was observed for all the samples. Moreover, measurements at low temperature showed shallow acceptor-level (As Te and V H g as acceptors) transitions. In HgCdTe(100), due to the higher arsenic activation, As Te was the dominant acceptor dopant, while, in HgCdTe(111)B, the main acceptor level was formed by the neutral V Hg . The determined activation energies for As Te and V H g dopants were of about 5 meV and 10 meV, respectively.
engineering, electrical & electronic,materials science, multidisciplinary,physics, applied