Abstract:A study has been made of the electrical behaviour of In-doped metal organic vapour phase epitaxy (MOVPE) layers of Hg(1-x)Cd(x)Te grown by the interdiffused multilayer process (imp) in order to establish the factors needed to obtain uniform extrinsic n-type layers with high electrical activity and mobility. Layers with x between 0.2 and 0.3 were grown on (100) CdTe and CdTeSe at 360-degrees-C using di-isopropyltelluride (DIPT) and doped with trimethylindium (TMIn) in two ways, depending on In concentration, [In]. For [In] > 1 x 10(17) cm-3 layers were doped with TMIn on the CdTe part of the imp cycle while for [In] in the range 1 X 10(15) to l X 10(17) cm-3 the TMIn memory of the growth system was used, resulting in doping on the HgTe part of the imp cycle because of a greater efficiency of incorporation. In profiles, which were determined by secondary-ion mass spectrometry (SIMS), are shown to depend on doping process due to TMIn partial pressure variations from adsorption effects. The layers, which were capped with CdTe to prevent inadvertent post-growth annealing from affecting the electrical activity of the In, were p type when undoped. On doping, as-grown layers become n type at 77 K at [In] approximately 1 x 10(16) cm-3 due to the concentration of donors exceeding the background concentration of Hg acceptor vacancies. The percentage of In electrically active is 33 % at [In] less-than-or-equal-to 2 x 10(18) cm-3 and 15-20 % at higher [In]. The 77 K Hall mobilities of layers, both p and n type, are low when [In] > 1 x 10(16) cm-3, probably because of high levels of compensation. Low temperature annealing to remove Hg vacancies, both ex situ and in situ, significantly improves the electrical properties. Electrical activity of the In increases to 100 % over the [In] range 1 x 10(15) to 2 x 10(18) cm-3 and to 40 % at higher concentrations. 77 K Hall mobility of the n-type layers increases and shows a dependence on carrier concentration and x consistent with lightly compensated material. Results are in agreement with In doping introducing autocompensating centres which anneal out on a low-temperature Hg-rich anneal.

Arsenic-doped Narrow-Gap HgCdTe Epilayers Studied by Infrared Modulation Spectroscopy

Infrared Photoluminescence of Arsenic-Doped Hgcdte in A Wide Temperature Range of Up to 290 K

Impurity Levels and Bandedge Electronic Structure in As-Grown Arsenic-Doped HgCdTe by Infrared Photoreflectance Spectroscopy

Evolution of Infrared Photoreflectance Lineshape with Temperature in Narrow-Gap HgCdTe Epilayers

Cutoff Wavelength of Hg1-Xcdxte Epilayers by Infrared Photoreflectance Spectroscopy

Fabrication and performances of arsenic-doped HgCdTe long-wavelength infrared photodiode arrays

In-situ ellipsometric study on composition-dependent short-wave HgCdTe in the process of molecular beam epitaxy growth

Backside-Illuminated Infrared Photoluminescence and Photoreflectance: Probe of Vertical Nonuniformity of Hgcdte on Gaas

Arsenic doping and activations in HgCdTe by MBE

Recent Progress and Potential Impact of Modulation Spectroscopy for Narrow-Gap Hgcdte

Modulation Mechanism of Infrared Photoreflectance in Narrow-Gap Hgcdte Epilayers: A Pump Power Dependent Study

Application of infrared transmission spectra in the assessment of HgCdTe epilayers

Spectra Analysis of Annealed Hg1−xCdxTe Molecular Beam Epitaxial Films

Optical and Electronic Characterization on HgCdTe Materials

Study Of Interdiffusion In Hgcdte/Cdznte Structures By Infrared Transmission Spectroscopy

Study Of Impurity States In P-Type Hg1-Xcdxte Using Far-Infrared Spectroscopy

Spectroscopy of Semiconductor Heteroepitaxial Structures Based on InGaAs for the Development of NIR Photodetectors

Diffusion coefficient of as in HgCdTe epilayers

Infrared Photoconductor Fabricated with A Molecular-Beam Epitaxially Grown Cdte/Hgcdte Heterostructure

Control of the Electrical Properties of In-doped HgCdTe Grown by MOVPE for IR Detector Applications

As-Doping Hgcdte By Mbe