Abstract:The effect of As+ ion implantation on the electrical properties of the near-surface layer of n-HgCdTe films grown by molecular beam epitaxy (MBE) on Si (310) substrates was experimentally studied. A specific feature of MBE n-Hg0.78Cd0.22Te films is the presence of near-surface graded-gap layers with a high CdTe content, formed during epitaxial growth. The properties of as-grown films and films after As+ ion implantation with ion energy of 200 keV and fluence of 1014 cm−2 were studied. Post-implantation activation annealing was not performed. Test metal–insulator–semiconductor (MIS) structures were created based on as-grown and as-implanted samples by plasma-enhanced atomic layer deposition of Al2O3 insulator films. The admittance of the fabricated MIS structures was measured over a wide range of frequencies and temperatures. When determining the parameters of MIS structures, we used techniques that take into account the presence of near-surface graded-gap layers and series resistance of the HgCdTe film bulk, as well as the high density of slow surface states. It was found that, in as-implanted samples, the donor center concentration in the near-surface layer exceeds 1017 cm−3 and increases with distance from the HgCdTe-Al2O3 interface (at least up to 90 nm). After implantation, the conductivity of MBE HgCdTe film bulk increases markedly. It was shown that, for as-implanted samples, the generation rate of minority charge carriers in the MBE HgCdTe surface layer is significantly reduced, which indicates the appearance of a low defect layer with a thickness of at least 90 nm.

Barrier layer induced channeling effect of As ion implantation in HgCdTe and its influences on electrical properties of p-n junctions.

Influence of As+ Ion Implantation on Properties of MBE HgCdTe Near-Surface Layer Characterized by Metal–Insulator–Semiconductor Techniques

Effects of Ga-Te Interface Layer on the Potential Barrier Height of CdTe/GaAs Heterointerface.

A Junction-Level Optoelectronic Characterization of Etching-Induced Damage for Third-Generation HgCdTe Infrared Focal-Plane Array Photodetectors

Study on electric properties of boron ion implantation of MBE grown HgCdTe

Disclosing the carrier distributions in ion-implanted HgCdTe p–n junctions with scanning capacitance microscopy

Effects of different passivation layers on RV characteristics of long-wave HgCdTe gate-controlled diodes

Study of B+ -implanted HgCdTe under rapid thermal annealing

Molecular Beam Epitaxy and Characterizations of PbTe Grown on GaAs(211) Substrates Using CdTe/ZnTe Buffers

On the structural evolutionary behavior of the CdTe/HgCdTe interface during the annealing process

Influence of High Dose As Ion Implantation on Electrical Properties of High Resistivity Silicon

A Study of Electrical Characteristics for Boron Implantation of Mbe Grown Hgcdte

The passivation effects of CdTe deposited by MBE in MW HgCdTe photodiodes

MBE HgCdTe on Alternative Substrates for FPA Applications

Enhanced Performance of HgCdTe Long-Wavelength Infrared Photodetectors with Nbn Design

The influence of Hg vacancy control of HgCdTe materials with different passivation layers through thermal annealing

HgCdTe photodiode arrays passivated by MBE in-situ grown CdTe film

Mercury Cadmium Telluride Implanted Junction Profile Measurement And Depth Control

Study of Junction Performance in Mid-Wavelength HgCdTe Photodiodes by Laser Beam-Induced Current Microscope

Effect Of Thermal Annealing On The Interface Changes Of Multi- Layer Hgcdte P-On-N Materials Grown By Mbe

Fabrication and performances of arsenic-doped HgCdTe long-wavelength infrared photodiode arrays