Abstract:In this paper, the operation mechanism of trench termination is investigated through 2-D numeric simulation on Silvaco. It is found that in trench termination, the electric field is terminated by the accumulated holes at the outer trench sidewall. In order to ensure a high termination breakdown voltage, the trench is refilled with a combination of SiO<sub>2</sub> and polyimide (PI). Through various 2-D numerical simulations, the impact of structural parameters on breakdown voltage has been discussed, namely, trench depth (TD), trench width (TW), and sidewall tilt angle. The 3-D simulations are also conducted to investigate the effect of round corner radius on the device breakdown voltage and electric field in the dielectrics. Based on these results, the trench termination is designed and then fabricated along with a p-i-n diode. The measurement results show that a $14~mu text{m}$ wide trench is sufficient to terminate a voltage of 1750V (>96% of the ideal planar breakdown). Comparing with conventional field limiting rings junction termination extension (FLR/JTE) technology, this trench termination can significantly reduce the termination length by a factor of 4. As a result, the area efficiency is largely improved from 62% to around 90% for a 2A device conducting at 1000 A/cm<sup>2</sup>. These results indicate that the SiC device price can be substantially lowered with such an area-efficient trench termination technology. Furthermore, the 168-h high-temperature reverse bias (HTRB) test under 1200 V and 175 °C shows the potential of this trench termination for long-term reliable operation. Finally, unclamped inductive switching (UIS) tests have been conducted on fabricated devices. Compared to commercial SiC junction barrier Schottky diodes with FLR, fabricated p-i-n diodes with trench termination -how significant higher avalanche capability.

An Improved Composite JTE Termination Technique for Ultrahigh Voltage 4H-Sic Power Devices

A Multiple-Ring-Modulated JTE Technique for 4H-Sic Power Device with Improved JTE-Dose Window

Improved Etched Multistep JTE for UHV SiC Power Devices

Expanding the Dose Window of Step-Etched Space-Modulated JTE for Ultrahigh Voltage 4H-Sic Devices

Etched Junction Termination Extension With Floating Guard Rings And Middle Rings For Ultrahigh-Voltage 4h-Sic Pin Diodes

Step JTE, an Edge Termination for UHV SiC Power Devices with Increased Tolerances to JTE Dose and Surface Charges

Characterization and Fabrication of the CFM-JTE for 4H-Sic Power Device with High-Efficiency Protection and Increased JTE Dose Tolerance Window

Hybrid Termination with Wide Trench for 4H-Sic Super-Junction Devices

A New Edge Termination Technique for High-Voltage Devices in 4H-Sic–multiple-floating-zone Junction Termination Extension

Development of G10kv 4H-Sic SBD Junction Extension Termination

Two-mesa, guard rings assisted two-zone JTE for ultrahigh-voltage(>10kv) 4H-SiC p-i-n diodes

Bevel Junction Termination Extension—A New Edge Termination Technique for 4H-Sic High-Voltage Devices

High Voltage SiC JBS Diodes with Multiple Zone Junction Termination Extension Using Single Etching Step

An Effective High-Voltage Termination for Sic Planar Pn Junctions for Use in High-Voltage Devices and Uv Detectors

A Near Ideal Edge Termination Technique for Ultrahigh-Voltage 4H-Sic Devices with Multi-Zone Gradient Field Limiting Ring

A Study of the High-K Enhanced Depletion-JTE for Ultra-High Voltage SiC Power Device with Improved JTE-Dose Window

Implantation-free SiC Thyristor with Single-Mask 3D Termination Near 10 Kv

12.5 Kv SiC Gate Turn off Thyristor with Trench-Modulated JTE Structure

Design and Characterization of Area-Efficient Trench Termination for 4H-SiC Devices

Single-Implant, Field Plate and Guard Rings Assist Multi-Zone Graded Jte for 4H-Sic P-I-N Diodes

Practical One-Step Solution of Smoothly Tapered Junction Termination Extension for High Voltage SiC Gate Turn-off Thyristor