Abstract:This study presents an investigation of high-voltage enhancement-mode p-GaN gate HEMTs on a sapphire substrate. The breakdown voltage of the devices shows a linear relationship with the <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$L_{\text{GD}}$</tex> . For <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$L_{\text{GD}}=27 \mu\mathrm{m}$</tex> , the device exhibits a high breakdown voltage of 1412 V. The threshold voltage is 0.9 V. The <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$R_{\text{on}}$</tex> is <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$17.7\ \ \Omega\cdot \text{mm}$</tex> , and the specific on-resistance <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$R_{\text{sp}}$</tex> is <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$6.73\ \mathrm{m}\Omega\cdot \text{cm}^{2}$</tex> . To measure the depletion region directly for high-voltage devices, depletion-testing structures were fabricated alongside the HEMTs. The depletion lengths were determined based on the I- <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$V$</tex> characteristics of the structures, with the pinch-off voltage of the I- <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$V$</tex> characteristics correlated to the depletion length. Additionally, using pulse waveforms as the gate control signals, the formation of the depletion region under dynamic conditions was revealed.

A Study of the High-K Enhanced Depletion-JTE for Ultra-High Voltage SiC Power Device with Improved JTE-Dose Window

An Improved Composite JTE Termination Technique for Ultrahigh Voltage 4H-Sic Power Devices

Improved Etched Multistep JTE for UHV SiC Power Devices

Theoretical Study of an Effective Field Plate Termination for SiC Devices Based on High-k Dielectrics

Expanding the Dose Window of Step-Etched Space-Modulated JTE for Ultrahigh Voltage 4H-Sic Devices

Etched Junction Termination Extension With Floating Guard Rings And Middle Rings For Ultrahigh-Voltage 4h-Sic Pin Diodes

Development of G10kv 4H-Sic SBD Junction Extension Termination

Step JTE, an Edge Termination for UHV SiC Power Devices with Increased Tolerances to JTE Dose and Surface Charges

Two-mesa, guard rings assisted two-zone JTE for ultrahigh-voltage(>10kv) 4H-SiC p-i-n diodes

Deep Trench Junction Termination Employing Variable-K Dielectric For High Voltage Devices

High-k Dielectric Assisted Trench Termination of the 4H-SiC Super Junction Device for Improved Avalanche Capability

Study of the high-k/SiO2 stacked gate micro-pattern trench CSTBT

High Voltage SiC JBS Diodes with Multiple Zone Junction Termination Extension Using Single Etching Step

Design and Optimization of Planar Mesa Termination for Diamond Schottky Barrier Diodes

Development of 400 V-tolerant Single-Event Effect Hardened 4H-SiC Schottky Diode with linear energy transfer upto 83.5 MeV·cm 2 /mg

Fabrication characteristics of 1.2kV SiC junction barrier schottky rectifiers with etched implant junction termination extension

2Kv Low Leakage Vertical NiO/β-Ga2O3 Hetero-Junction Diode and Its Thermal/Electrical Stability

A Multiple-Ring-Modulated JTE Technique for 4H-Sic Power Device with Improved JTE-Dose Window

12.5 Kv SiC Gate Turn off Thyristor with Trench-Modulated JTE Structure

Simulation of 4H-SiC Trench Junction Barrier Schottky Diodes with High-k Dielectrics

Method to Study Dynamic Depletion Behaviors in High-Voltage (<tex>$BV=1.4\ \text{kV}$</tex>) p-GaN Gate HEMT on Sapphire Substrate