A Near Ideal Edge Termination Technique for Ultrahigh-Voltage 4H-Sic Devices with Multi-Zone Gradient Field Limiting Ring

Xiaochuan Deng,Shaodong Xu,Bo Zhang,Lirao Zeng,Chenzhan Li,Jia Wu,Juntao Li

DOI: https://doi.org/10.1109/wipdaasia.2018.8734553

2018-01-01

Abstract:In this paper, an improved 4H-silicon carbide (SiC) junction barrier Schottky (JBS) rectifier with the application of multi-zone gradient filed limiting ring (MZG-FLR) is proposed and fabricated without extra process steps or masks. Multi-zone variable ring spacings for the FLR termination are applied to improve the blocking voltage by reducing the peak surface electric field at the edge termination region, which acts like a variable lateral doping profile resulting in a gradual field distribution. A breakdown voltage of 14 kV at a leakage current of $1 \times 10^{-5}$ A is achieved from the fabricated rectifiers with a 100 $\mu$m thick N- epi-layer doped to $5 \times 10^{14} \mathrm{cm}^{-3}$, which is nealy 99% of the ideal parallel-plane value. A forward current density of 20 A/cm2 has been measured at a forward voltage drop of 4.1 V for devices with an active area of 0.15 mm2. The simulation and experimental results show that the proposed device exhibits approximately 50% improvement in the reverse blocking voltage, and indicate that MZG-FLR structure is promising as an ultrahigh voltage operation device (>10kV) for high-power electronic systems applications.