Abstract:Ge-rich SiGe thin films were epitaxially grown on Si (100) substrate by reactive thermal chemical vapor deposition. Germanium tetrafluoride (GeF4) was selected as the Ge source material and disilane (Si2H6) is used as the reductant gas. By designing the surface reaction, high quality Ge-rich Si1-xGex epilayers were prepared under low temperature (350 degrees C) conditions. Effect of hydrogen annealing on the microstructure and electrical property was studied. The results reveal that the surface morphology of SiGe epilayer deteriorates drastically if the annealing temperature is higher than 700 degrees C. The optimal annealing temperature is found to be 650 degrees C. Under this condition, the threading dislocation density decreases from 3.7 X 10(6) cm(-2) to 4.3 X 10(5) cm(-2) and the surface root mean square roughness is also slightly decreased from 1.27 nm to 1.18 nm. Simultaneously, the crystalline quality of the SiGe epilayers is effectively improved. Carrier mobility of the annealed samples, measured by Hall-effect equipment, is enhanced obviously as compared to that of the as-deposited samples. These results suggest that the properties of the annealed SiGe thin, films, epitaxially grown by reactive thermal chemical vapor deposition at low-temperature, can be comparable to those of SiGe epilayers grown by high-temperature techniques.

High quality Ge-rich SiGe thin films epitaxially grown on Si at low temperature by two-step approach

Epitaxial growth of high-quality Ge layers on Si with Ge2H6 under UHV-CVD conditions

High-quality Ge film grown on Si substrate and its thermodynamic mechanism

Single-Crystalline Si1-Xgex (X=0.5 Similar To 1) Thin Films On Si (001) With Low Threading Dislocation Density Prepared By Low Temperature Molecular Beam Epitaxy

Heteroepitaxial Growth of Ge Films on Si Substrates by Molecular-Beam Epitaxy

Epitaxial growth of low dislocation Ge thin films on Si (001) substrates using a Si-Ge intermediate layer

Epitaxial Ge thin film Growth on Si Using a Cost-Effective Process in Simplified CVD Reactor

Effect of Hydrogen Annealing on the Property of Low-temperature Epitaxial Growth of Sige Thin Films on Si Substrate

Growth of Ultrathin Si1-xGex Films on Si Substrate for Fabricating SGOI

Growth of Ge Layer on Relaxed Ge-Rich SiGe by Ultrahigh Vacuum Chemical Vapor Deposition

Epitaxy of GaAs thin film with low defect density and smooth surface on Si substrate

Nano-structured Multi-Layer SiGe Alloy Grown by Ultra High Vacuum Chemical Vapor Deposition

Optimization of Hetero-Epitaxial Growth for the Threading Dislocation Density Reduction of Germanium Epilayers

Study of Si and Ge growth on Si(100) surface

Study of Si1-xGEx epitaxy growth on Si(100) and Si(111)

Fabrication of Strained Ge Film Using a Thin SiGe Virtual Substrate

Investigation of Strain-Relaxed SiGe Thin Film Grown on Ion-Implanted Si Compliant Substrate

Defects and Strain in Ge x Si 1−x Layers Grown by Rapid Thermal Processing Chemical Vapor Deposition

High quality partially relaxed SiGe film grown on silicon-on-insulator substrate by ultra-high vacuum chemical vapor deposition

A Dislocation-Driven Laminated Relaxation Process in Si1−xGex Grown on Si (001) by Molecular Beam Epitaxy

Growth of Ge-Si strained layers and DC XRD study on epitaxial films