Abstract:Abstract In this study, an Ar/O 2 plasma mixture treatment with different proportions of O 2 was used to reduce the oxygen vacancy density in an amorphous indium gallium zinc oxide (a-IGZO) thin film. The objective was to enhance the field-effect carrier mobility in a thin-film transistor (TFT) with the IGZO film as the channel layer. Atomic force microscopy revealed that the roughness of the IGZO film after plasma treatment was higher than that of the untreated film; however, the surface roughness of the IGZO film decreased after the proportion of O 2 was increased in the plasma. The Hall measurement results showed that the resistivity of the plasma-treated IGZO film increased with a decrease in the electron concentration in the film; in addition, the carrier mobility considerably increased. The IGZO TFT fabricated from this film exhibited a high field-effect carrier mobility of 36 cm 2 V −1 s −1 , a subthreshold swing (SS) of 1.25 V/decade, an I OFF current of 4.58 × 10 −11 A, and an I ON / I OFF current ratio of 7.55 × 10 5 . To further improve the device performance, the plasma-treated IGZO films were subjected to thermal annealing with the annealing temperature ranging from 100 °C to 300 °C. After the annealing process, the plasma-treated IGZO TFTs demonstrated a further improvement in the device performance with a field-effect carrier mobility of 38.8 cm 2 V −1 s −1 , SS of 0.7 V/decade, I OFF current of 1.04 × 10 −11 A, and an I ON / I OFF current ratio of 9.93 × 10 6 . In addition, a reliability test was performed to evaluate the stability of the IGZO TFT devices, which revealed that the threshold voltage maintained a high degree of stability during the long-term tests. Therefore, the plasma-treated IGZO TFTs with subsequent postgrowth annealing could be helpful for the fabrication of next-generation flat-panel displays.

The Effects Of N2o Plasma Treatment On The Device Performance Of Solution-Processed A-Inmgzno Thin-Film Transistors

P-20: Effects of N<sub>2</sub> O Plasma Treatment Time on the Performance of Self-Aligned Top-Gate amorphous oxide Thin Film Transistors

N2O plasma treatment suppressed temperature-dependent sub-threshold leakage current of amorphous indium–gallium–zinc-oxide thin film transistors

Investigation of oxygen plasma treatment on the device performance of solution-processed a-IGZO thin film transistors

Influence of Oxygen Plasma Treatment on the Amorphous IGZO Thin Film Transistors

Influence of Double Channel Layers on the Performance of Nitrogen Doped Indium-zinc-oxide Thin Film Transistors

Effect of Oxygen Plasma Treatment on the Performance of GQDs-Modulated InGaZnO Thin-Film Transistors

Fast Improved Thin-Film Transistors with Atomic-Layer-Deposited In2O3 Channels Via O2 Plasma Treatment

Investigation of Oxygen and Argon Plasma Treatment on Mg-doped InZnO Thin Film Transistors

Rapid Improvement in Thin Film Transistors with Atomic-Layer-Deposited InOxChannels Via O2Plasma Treatment

Intermittent O$_{\text{2}}$ Plasma Treatment as a Novel Strategy to Optimize the Electrical Properties of Nanofibers-Based Transistors

Atmosphere Effect in Post-Annealing Treatments for Amorphous InGaZnO Thin-Film Transistors with SiOx Passivation Layers

Plasma Influences on the Performance of Ti Protected Back-Channel-Etched A-Igzo TFTs

Performance and Stability Improvements of Back-Channel-Etched Amorphous Indium–Gallium–Zinc Thin-Film-Transistors by CF 4 +O 2 Plasma Treatment

Improvement of device characteristics of plasma-treated indium gallium zinc oxide thin-film transistors through thermal annealing

Effect of Oxygen Treatment on the Electrical Performance and Reliability of IWO Thin-Film Transistors

Influences of Nitrogen Doping on the Electrical Characteristics of Indium-Zinc-Oxide Thin Film Transistors

Performance Enhancement of Field-Effect Transistors Based on In2O3 Nanofiber Networks by Plasma Treatment

Generation of InGaZnO Nanoparticle by Ar/O2 Plasma Exposure for Performance Improvement of Oxide TFTs

Comparison of N-2 and Ar Plasma Treatment for Source/Drain Formation in Self-Aligned Top-Gate Amorphous Ingazno Thin Film Transistor

Improved electrical properties of bottom-gate mizo thin film transistors using oxygen and argon plasma treatment