Abstract:Zinc oxide (ZnO)-based thin-film transistors (TFTs) have attracted increasing attention towards flat-panel displays as alternatives to silicon-based TFTs due to their transparency to visible light. Magnesium oxide (MgO) has a wide bandgap (7.8 eV) and high dielectric constant (k). This leads to the development of TFTs using MgO as a gate oxide layer, which can significantly reduce the operating voltage. However, the electrical properties and dielectric constant of MgO are determined from the percentage of oxygen in MgO. In this study, a MgO gate-oxide was deposited on ZnO by magnetron sputtering at various oxygen concentrations (0%, 66%, and 100%) to fabricate TFTs. With an increase in the oxygen concentration, the oxygen vacancies of MgO were compensated, thereby improving the crystallinity and enhancing the dielectric constant from 6.53 to 12.9 for the oxygen concentrations of 0% and 100%. No pinch-off (saturation) behavior was observed in the TFTs with 0% oxygen; however, the pinch-off voltages were significantly reduced to 17 and 2 V in the TFTs with 66% and 100% oxygen, respectively; hence, the TFT-100 could be operated at a low operating voltage (2 V). With an increase in oxygen from 0% to 100%, the threshold voltage and trap-state density significantly decreased from -159 V and 1.6 × 1018cm-3to -31.4 V and 6.5 × 1016cm-3, respectively. The TFTs with 0% oxygen exhibited a higher field-effect mobility of 12 cm2V-1s-1due to the uncompensated oxygen vacancy in ZnO, which had a higher electron concentration. After introducing oxygen atoms, the field-effect mobility decreased to 0.16 cm2V-1s-1in the TFTs with 66% oxygen, which can be attributed to the compensated oxygen vacancy and lower electron concentration. In contrast, the field-effect mobility increased to 1.88 cm2V-1s-1for the TFTs with 100% oxygen due to the enhanced dielectric constant and crystallinity of MgO.

Investigation of Oxygen and Argon Plasma Treatment on Mg-doped InZnO Thin Film Transistors

Improved electrical properties of bottom-gate mizo thin film transistors using oxygen and argon plasma treatment

Preparation and Characterization of Mg-doped ZnO Thin Films by Sol–gel Method

Investigation of oxygen plasma treatment on the device performance of solution-processed a-IGZO thin film transistors

Effects of Oxygen Plasma Etching and Post-Annealing on Pt Schottky Contact on Mg-Doped Inzno

Enhancement of Electrical Characteristics of SnGaO Thin-Film Transistors Via Argon and Oxygen Plasma Treatment

Effect of Oxygen Plasma Treatment on the Performance of GQDs-Modulated InGaZnO Thin-Film Transistors

Preparation and Characterization of Molybdenum-Doped Indium-Zinc-Oxide Thin Film Transistors

Influence of Oxygen Plasma Treatment on the Amorphous IGZO Thin Film Transistors

The Effects Of N2o Plasma Treatment On The Device Performance Of Solution-Processed A-Inmgzno Thin-Film Transistors

Tuning lattice defects and photocurrent response of ZnO thin films by Mg doping and Ar-H 2 atmospheric plasma treatment

Improving Device Characteristics of Dual-Gate IGZO Thin-Film Transistors with Ar–O2 Mixed Plasma Treatment and Rapid Thermal Annealing

Investigation on Physical Properties of IGZO Thin Films under the Conditions of Mixing Oxygen and Argon

Improving the electrical properties of transparent ZnO-based thin- film transistors using MgO gate dielectric with various oxygen concentrations

Oxygen Plasma Assisted High Performance Solution-Processed Al2Ox Gate Insulator for Combustion-Processed InGaZnOx Thin Film Transistors

The properties of thin film transistors with Mg-In-Zn-O Schottky source and drain

P-1.7: Influence of Mg Content and Argon/Oxygen Ratio on Photoelectric properties of co-sputtering MIZO

Influence of oxygen flow during sputtering process on the electrical properties of Ga-doped InZnSnO thin film transistor

P‐1.7: Influence of Mg Content and Argon/Oxygen Ratio on Photoelectric properties of co‐sputtering MIZO

Effect of O2 Incorporation During the Channel Fabrication Process on Aluminum-Doped Zinc Oxide Thin-Film Transistor Characteristics

Mg Doping to Simultaneously Improve the Electrical Performance and Stability of Mgino Thin-Film Transistors