Abstract:Active electronics implemented on cheap flexible polymer substrates offer the promise of novel display technologies, wearable electronics, large area memory, and a multitude of other, as-yet-unthought-of applications that require low cost and high volume manufacturing. Thin film transistors (TFT's) fabricated on temperature-sensitive plastic substrates at low temperatures are the key to this technology. TFT's that use metal (In, Zn, Sn, Ga) oxide channels offer both high mobility (relative to amorphous Si) and the advantage of optical transparency in the visible regime. We report on the fabrication and performance of amorphous oxide transparent thin film transistors that use dc-magnetron sputter techniques to deposit IZO (In2O3 — 10 wt.% ZnO) at low oxygen potential (0 vol.% O2) for the source, drain, and gate-contact metallization and, at higher oxygen partial pressures (10 vol.% O2), for the semi-conducting channel. The devices in this study were processed at room temperature except for a single 280 °C PECVD deposition step to deposit a 230 nm-thick SiOx gate dielectric. The devices are optically transparent and operate in depletion mode with a threshold voltage of −5 V, mobility of 15 cm2/V s, an on-off ratio of >106 and, a sub-threshold slope of 1.2 V/decade. In addition, we report persistent photo-conductivity in the channel region of these devices when exposed to UV illumination.

The properties of thin film transistors with Mg-In-Zn-O Schottky source and drain

Electrical Properties of Wide Bandgap ZnMgO and Fabrication of Transparent Thin Film Transistors

ZnO-Based Transparent Thin-Film Transistors with MgO Gate Dielectric Grown by In-Situ MOCVD

Transparent Thin-Film Transistors Using ZnMgO as Dielectrics and Channel

Optical and Electrical Properties of N-doped ZnO and Fabrication of Thin-Film Transistors

Study of zinc tin oxide thin-film transistor

Structural, Electrical, and Optical Properties of ZnInO Alloy Thin Films

Thin-film transistors with sol-gel deposited Mg0.1Zn 0.9O films as active channel layer

Solution-Processed Zinc Oxilde Thin Films and Top-Gate Thin Film Transistors

Applications of Cubic MgZnO Thin Films in Metal–Insulator–Silicon Structures

The fabrication and study of ZnO-based thin film transistors

Fabrication of Transparent Indium Zinc Oxide Thin Film Transistors by Sol-gel Technology

Investigation of Oxygen and Argon Plasma Treatment on Mg-doped InZnO Thin Film Transistors

Structural and Optical Characteristics of Titanium-Doped Zinc Oxide Thin Films and Applications in Thin Film Transistors

Amorphous InGaZnO Thin Film Transistors with Different Transparent Electrodes

Fabrication and Properties of InGaZnO Thin-Film Transistors Based on a Sol–Gel Method with Different Electrode Patterns

Development of Transparent Oxide Thin Films for Flexible Devices

The Fabrication of Thin Film Transistors with ZnO As Active Channel Layer

Role of Zinc Interstitial Defects in Indium and Magnesium Codoped ZnO Transparent Conducting Films

Performances of Transparent Indium Zinc Oxide Thin Film Transistors Using ZrO2 As Dielectric Processed by Solution Method

Amorphous IZO-based transparent thin film transistors