Fabrication of Silicon Based PZT Thick Film by Tape-casting Technology

林州,赵宏锦,任天令,刘理天,左如忠,李龙土
DOI: https://doi.org/10.3969/j.issn.1004-2474.2001.06.013
2001-01-01
Abstract:A silicon based lead zirconate titanate (PZT) thick film technology by tape casting is studied in this paper.PZT thick films are fabricated upon different seed layers considering the influence of the substrate characteristic to the thick film quality.The technology result is tested to confirm the function of the seed layer.The influence of the sintering time to the tape casting PZT thick film quality is analyzed and the optimum sintering time is concluded.The silicon based PZT thick film technology in this paper can be used to fabricate the substrate of the radio frequency antenna.
What problem does this paper attempt to address?