Abstract:Abstract Silicon interposers embedded with ultra-deep through-silicon vias (TSVs) are in great demand for the heterogeneous integration and packaging of opto-electronic chiplets and microelectromechanical systems (MEMS) devices. Considering the cost-effective and reliable manufacturing of ultra-deep TSVs, the formation of continuous barrier and seed layers remains a crucial challenge to solve. Herein, we present a novel dual catalysis-based electroless plating (ELP) technique by tailoring polyimide (PI) liner surfaces to fabricate dense combined Ni barrier/seed layers in ultra-deep TSVs. In additional to the conventional acid catalysis procedure, a prior catalytic step in an alkaline environment is proposed to hydrolyze the PI surface into a polyamide acid (PAA) interfacial layer, resulting in additional catalysts and the formation of a dense Ni layer that can function as both a barrier layer and a seed layer, particularly at the bottom of the deep TSV. TSVs with depths larger than 500 μm and no voids are successfully fabricated in this study. The fabrication process involves low costs and temperatures. For a fabricated 530-μm-deep TSV with a diameter of 70 μm, the measured depletion capacitance and leakage current are approximately 1.3 pF and 1.7 pA at 20 V, respectively, indicating good electrical properties. The proposed fabrication strategy can provide a cost-effective and feasible solution to the challenge of manufacturing ultra-deep TSVs for modern 3D heterogeneous integration and packaging applications.

Barrier and Seed Layers Deposition in TSV Using Magnetron Sputtering

Optimization and Evaluation of Sputtering Barrier/Seed Layer in Through Silicon Via for 3-D Integration

Pretreatment to Assure the Copper Filling in Through-Silicon Vias

Influence of Electroplating Current Density on Through Silicon Via Filling

Research of an integrated fabrication process of barrier layer and seed layer used in through silicon via

Impact of Super-long-throw PVD on TSV Metallization and Die-to-Wafer 3D Integration Based on Via-last

Effect of Seed Layer Thickness Distribution on 3d Integrated Through-Silicon-Vias (tsvs) Filling Model

CU seed, CMP process development and via resistance extraction in through silicon via technology

Microfabrication of Through Silicon Vias (TSV) for 3D SiP

Effective Approach for TSV Cu Plating Gap Fill Improvement

Wet processes deposition for HAR TSV metallization using electroless Co liner and alkaline Cu seed layer

Completely Filling of Through-Silicon-Vias with High Aspect Ratio by High Cavity Physical Vapor Deposition and Electroplating

An ultra-deep TSV technique enabled by the dual catalysis-based electroless plating of combined barrier and seed layers

Bottom-up Filling of Through Silicon Via (TSV) with Parylene As Sidewall Protection Layer

Optimization of innovative approaches to the shortening of filling times in 3D integrated through-silicon vias (TSVs)

Fabrication and Filling Quality Optimization of the High Density and Small Size Through Silicon Via Array for Three-Dimensional Packaging

Fabrication and Characterization of Fine Pitch TSV Integration with Self-Aligned Backside Insulation Layer Opening.

Cu filling of TSV using various current forms for three‐dimensional packaging application

Autocatalytic Deposition of Nickel–Boron Diffusion Barrier onto Diazonium-Treated SiO 2 for High Aspect Ratio Through-Silicon Via Technology in 3D Integration

Moving Boundary Simulation and Experimental Verification of High Aspect-Ratio Through-Silicon-Vias for 3-D Integration

A Wet Process to Form Silicon Oxide Thin Layer for Through Silicon Via Application