Abstract:Despite the fact that substantial research has been conducted on the through-silicon via (TSV) formation process during three-dimensional integration, there is still less understanding on the chemical mechanical planarization (CMP) process and post-CMP via dishing control mechanism in TSV fabrication. In this study, we investigated the synergistic effect of mechanical and chemical factors on the CMP performance of TSV, and analyzed the experimental results from different aspects. A high-resolution surface-profile-measuring instrument, combined with Scanning Electron Microscopy (SEM) and other measurements, was used to demonstrate the mechanism of non-uniformity and via dishing, and the experimental results indicate that via dishing and non-uniformity of wafers are strongly mitigated by combining high down force with low down force. Based on numerical analysis, it can be concluded that the solution of the via protrusion issue requires a sufficiently high hydrogen peroxide concentration in order to modify the removal rate selectivity of copper and barrier/oxide. The polishing time should be strictly controlled to prevent oversize dishing or protrusion. Moreover, material removal models for via dishing, based on several factors mentioned above, were established to elucidate the mechanism of via dishing/protrusion formation, and to illustrate the further optimization of the TSV–CMP process.

Optimization and Evaluation of Sputtering Barrier/Seed Layer in Through Silicon Via for 3-D Integration

Influence of Electroplating Current Density on Through Silicon Via Filling

Barrier and Seed Layers Deposition in TSV Using Magnetron Sputtering

Effect of leveler on microstructure and stress of electroplated copper for TSV application

Pretreatment to Assure the Copper Filling in Through-Silicon Vias

Research of an integrated fabrication process of barrier layer and seed layer used in through silicon via

Optimization of innovative approaches to the shortening of filling times in 3D integrated through-silicon vias (TSVs)

Effect of Seed Layer Thickness Distribution on 3d Integrated Through-Silicon-Vias (tsvs) Filling Model

Impact of Super-long-throw PVD on TSV Metallization and Die-to-Wafer 3D Integration Based on Via-last

CU seed, CMP process development and via resistance extraction in through silicon via technology

Effective Approach for TSV Cu Plating Gap Fill Improvement

Improvement of Via Dishing and Non-Uniformity in TSV Chemical Mechanical Planarization

Effects of silicon via profile on passivation and metallization in TSV interposers for 2.5D integration

Parametric Study, Modeling of Etching Process and Application for Tapered Through-Silicon-via

A Wet Process to Form Silicon Oxide Thin Layer for Through Silicon Via Application

Microfabrication of Through Silicon Vias (TSV) for 3D SiP

Fabrication and Filling Quality Optimization of the High Density and Small Size Through Silicon Via Array for Three-Dimensional Packaging

Research of Vertical via Based on Silicon, Ceramic and Glass

A Wet Etching Approach for the Via-Reveal of a Wafer with Through Silicon Vias

Optimization of TSV Leakage in Via-Middle TSV Process for Wafer-Level Packaging

Modeling and Electromagnetic Analysis of Multilayer Through Silicon Via Interconnect for 3D Integration