Abstract:In this study, the effects of different influence factors on electroplating-based via-filling process were studied in a systematic manner. A through-silicon-via (TSV) chip was firstly designed, the chip size was $16\times 10{\rm mm}^{2}$ with the TSV interconnects. The via was in diameter of $50\mu {\rm m}$ and depth of $75\mu {\rm m}$. The deep reactive ion etching (DRIE) technique was employed to fabricate the vias onto the silicon wafer. In order to fill up the vias by using the electroplating process, the ${\rm SiO}_{2}$ isolation layer was firstly prepared onto the sidewall and the defined surface of the wafer using the plasma enhanced chemical vapor deposition (PECVD) technique, the TiW barrier layer was prepared onto the ${\rm SiO}_{2}$ layer with the sputtering process, the Cu seed layer was then deposited onto the barrier layer by the sputtering process to provide a foundation for copper growth during electroplated deposition. To achieve the “bottom-up” via-filling, the addictives were added into the copper plating solution. The results showed that the void free Cu filling can be achieved with an optimal additives ratio. The variation in both via opening and depth were found to be key factors influencing the via-filling quality. The process parameters such as current density, power waveform and so on were found to affect the vial filling quality. A comparison on the effects of key process parameters was made, showing that the current density, voltage waveform, and pulse reserve are three key parameters that affect the filling quality more than other parameters.

Effects of silicon via profile on passivation and metallization in TSV interposers for 2.5D integration

Influence of Electroplating Current Density on Through Silicon Via Filling

Sensitivity analysis of through-silicon via (TSV) interconnects for 3-D ICs

Electrothermal Effects in High Density Through Silicon Via (tsv) Arrays

Electrothermal modelling of through silicon via (TSV) interconnects

Impact of Super-long-throw PVD on TSV Metallization and Die-to-Wafer 3D Integration Based on Via-last

Optimization and Evaluation of Sputtering Barrier/Seed Layer in Through Silicon Via for 3-D Integration

Effects Of Via Pitch On Silicon Stress In Tsv Interposer

Through-silicon via arrays manufactured by photo assisted electrochemical etching and copper electroplating under SC-CO2 environment

Parametric Study, Modeling of Etching Process and Application for Tapered Through-Silicon-via

A wet process to etch arrayed vias for through silicon via application of 3D packaging

Optimization of innovative approaches to the shortening of filling times in 3D integrated through-silicon vias (TSVs)

CU seed, CMP process development and via resistance extraction in through silicon via technology

Reliability study of through-silicon via (TSV) copper filled interconnects

Fabrication and Characterization of Fine Pitch TSV Integration with Self-Aligned Backside Insulation Layer Opening.

Improvement of Via Dishing and Non-Uniformity in TSV Chemical Mechanical Planarization

Fabrication and Characterization of Annular Copper Through-Silicon Via for Passive Interposer Applications

Research of Vertical via Based on Silicon, Ceramic and Glass

Etching Scallop-Less Nano-Tsv with F/O Coupling Plasma

Design and analysis of an I-shaped TSV structure for 3D SiP

Parametric study of electroplating-based via-filling process for TSV applications