Abstract:Through silicon via (TSV) technology is the key enabling technology of high density, high performance three dimensional packaging such as System-in-Package (SiP) and System-on-Chip (SoC). In TSV technology, to obtain high-aspect ratio vias with good electrical and mechanical properties, filling the material (copper mostly) without voids or seams in the vias is vitally important. The filling properties of the copper is influenced significantly by the additives in the electrolyte, especially the accelerator and suppressor. In this simulation work, the electroplating process was described by a mathematical model, in which the fluid flow of electrolyte, the mass transport of the charged and neutral species and electrochemical reactions on the electrode surface were involved. Based on the mathematical model, the surface coverage of the additives and the local current density distribution at the electrode/electrolyte interface were calculated. The results show that the kinetics and mechanism of the copper deposition reaction are dependent on the fractional surface coverage of the additives. The results show that the suppressor is prior to adsorb at the electrode surface than the accelerator, due to the competitive adsorption of the suppressor and accelerator, by following the Langmiur isotherm adsorption model. Moreover, the coverage of the accelerator (SPS, Na-2(S(CH2)(3)SO3)) is high at the TSV bottom and relatively low at the TSV top. The local current density at the TSV bottom is larger than that at the TSV top and surface due to the influence of the surface coverage of the accelerator and suppressor, which contribute to the superfilling of TSV.

Effect of Seed Layer Thickness Distribution on 3d Integrated Through-Silicon-Vias (tsvs) Filling Model

Influence of Electroplating Current Density on Through Silicon Via Filling

Modeling the Bottom-Up Filling of Through Silicon Vias with Different Additives

Study on the behaviors of Cu filling in special through-silicon-vias by the simulation of electric field distribution

Pretreatment to Assure the Copper Filling in Through-Silicon Vias

Modeling the Copper Electrodeposition of Through-silicon-vias Corresponded to Linear Sweep Voltammetry

Wetting Process of Copper Filling in Through Silicon Vias

A Numerical Model for Bottom-Up Copper Electrodeposition of TSV with Additives

Numerical Simulation and Experimental Verification of Additive Distribution in Through-Silicon Via During Copper Filling Process

Collaborative Effect Between Additives and Current in TSV Via Filling Process

Mathematical Simulation and Experimental Verification for Through Silicon Via with Additives

Numerical Modeling And Experimental Verification Of Through Silicon Via (Tsv) Filling In Presence Of Additives

A Novel Model for Through-Silicon Via (TSV) Filling Process Simulation Considering Three Additives and Current Density Effect

Further Research on the Silicon Via Filling Mechanism Using an Arbitrary Lagrange-Eulerian (ale) Method

Optimization and Evaluation of Sputtering Barrier/Seed Layer in Through Silicon Via for 3-D Integration

Effect of External Factors on Copper Filling in 3D Integrated Through-Silicon-Vias (TSVs)

Barrier and Seed Layers Deposition in TSV Using Magnetron Sputtering

Numerical Simulation of the Tsv-Cu Filling by Electroplating Process with the Accelerator and Suppressor

Effect of Cetyl-Trimethyl-ammonium-bromide (CTAB) and Bis (3-Sulfopropyl) Disulfide (SPS) on the Through-Silicon-via (TSV) Copper Filling

Numerical simulation of copper electrodeposition for Through Silicon Via (TSV) with SPS-PEG-Cl additive system

Dynamics of filling process of through silicon via under the ultrasonic agitation on the electroplating solution