Abstract:In this study, the filling process of high aspect ratio through-silicon-vias (TSVs) under dense conditions using the electroplating method was efficiently achieved and optimized. Pulsed power was used as the experimental power source and the electroplating solution was prepared with various additive concentrations. Designed control variable experiments were conducted to determine the optimized method. In the control variable experiments, the relationship of multiple experimental variables, including current density (0.25–2 A/dm2), additive concentration (0.5–2 mL/L), and different shapes of TSVs (circle, oral, and square), were systematically analyzed. Considering the electroplating speed and quality, the influence of different factors on experimental results and the optimized parameters were determined. The results showed that increasing current density improved the electroplating speed but decreased the quality. Additives worked well, whereas their concentrations were controlled within a suitable range. The TSV shape also influenced the electroplating result. When the current density was 1.5 A/dm2 and the additive concentration was 1 mL/L, the TSV filling was relatively better. With the optimized parameters, 500-μm-deep TSVs with a high aspect ratio of 10:1 were fully filled in 20 h, and the via density reached 70/mm2. Finally, optimized parameters were adopted, and the electroplating of 1000-μm-deep TSVs with a diameter of 100 μm was completed in 45 h, which is the deepest and smallest through which a three-dimensional inductor has ever been successfully fabricated.

Optimization of innovative approaches to the shortening of filling times in 3D integrated through-silicon vias (TSVs)

Modeling the Bottom-Up Filling of Through Silicon Vias with Different Additives

Influence of Electroplating Current Density on Through Silicon Via Filling

Fabrication and Filling Quality Optimization of the High Density and Small Size Through Silicon Via Array for Three-Dimensional Packaging

Optimization of through silicon via for three-dimensional integration

Cu electroplating chemistry and process enabling rapid TSV filling with long bath life

Completely Filling of Through-Silicon-Vias with High Aspect Ratio by High Cavity Physical Vapor Deposition and Electroplating

Copper Filling Process for Small Diameter, High Aspect Ratio Through Silicon Via (Tsv)

High Aspect Ratio Copper Through-Silicon-vias for 3D Integration

Impact of Super-long-throw PVD on TSV Metallization and Die-to-Wafer 3D Integration Based on Via-last

A novel plating bath device for reducing surface copper thickness and improving wafer-scale uniformity

Fast copper plating process for TSV fill

Integrated wafer thinning process with TSV electroplating for 3D stacking

Optimizing Copper Filling Process For Through Silicon Via (TSV)

Microfabrication of Through Silicon Vias (TSV) for 3D SiP

Parametric study of electroplating-based via-filling process for TSV applications

Fabrication and Optimization of High Aspect Ratio Through-Silicon-Vias Electroplating for 3D Inductor.

TSV Filling Technology using Cu Electrodeposition

A Wet Etching Approach for the Via-Reveal of a Wafer with Through Silicon Vias

An ultra-deep TSV technique enabled by the dual catalysis-based electroless plating of combined barrier and seed layers

3D interconnection process development and integration with low stress TSV