Abstract:N-type polycrystalline higher manganese silicide ( MnSi 1.7) films are prepared on thermally oxidized silicon substrates by magnetron sputtering. MnSi 1.85, Si , and carbon targets are used in the experiments. By co-sputtering of the MnSi 1.85 and Si targets, n-type MnSi 1.7 films are directly obtained. By increasing the Si content to the deposited films, both the Seebeck coefficient and electrical resistivity increase to high values. A Si intermediate layer between the MnSi 1.7 film and substrate plays an important role on the electrical properties of the films. Without the interlayer, the Seebeck coefficient is not stable and the electrical resistivity is higher. For preparation of MnSi 1.7 films by solid phase reaction, a sandwich structure Si / MnSi x/ Si (x < 1.7) and thermal annealing are used. A carbon cap layer is used as a doping source. With the carbon doping, the electrical resistivity of the MnSi 1.7 film decreases, while the Seebeck coefficient increases slightly. For reactive deposition, the MnSi x (x < 1.7) film is directly deposited on the heated substrate with a Si intermediate layer. By using a Si cap layer, a MnSi 1.7 film with a Seebeck coefficient of -292 μ V/K and electrical resistivity of 23 × 10-3 Ω- cm at room temperature is obtained. The power factor reaches 1636 μW/mK2 at 483 K. With such a high power factor, the n-type MnSi 1.7 material may be superior to p-type MnSi 1.7 material for the development of thermoelectric generators. Several smaller (0.036 - 0.099 eV ) and intermediate (0.10 - 0.28 eV ) activation energies are observed from the curves of logarithm of the resistivity versus reciprocal temperature. The larger activation energies (0.35 - 1.1 eV ) are consistent with the reported energy band gaps for higher manganese silicides.

N-Type Polycrystalline Si Thick Films Deposited on SiNx-coated Metallurgical Grade Si Substrates

PROPERTIES OF PECVD SiNx FILM FOR SOLAR CELLS

Highly Conductive p-Type Silicon Carbon Alloys Deposited by Hot-Wire Chemical Vapor Deposition

Deposition and Thermoelectric Properties of N-Doped SiC Thick Films

Highly Doped P-Type Nanocrystalline Silicon Thin Films Fabricated by Low-Frequency Inductively Coupled Plasma Without H-2 Dilution

Low-Temperature (< 100 Degrees C) Poly-Si Thin Film Fabrication on Glass

Low Temperature SiNx:H Films Deposited by Inductively Coupled Plasma for Solar Cell Applications

Role of SiN x Barrier Layer on the Performances of Polyimide Ga₂O₃-doped ZnO p-i-n Hydrogenated Amorphous Silicon Thin Film Solar Cells

Preparation of High Quality Polycrystalline Silicon Thin Films by Aluminum-Induced Crystallization

PREPARATION OF N-TYPE HIGHER MANGANESE SILICIDE FILMS BY MAGNETRON SPUTTERING

N-Type In2S3 Films Deposited by Pulsed Laser Deposition: Effect of Laser Power on the Properties of the Films

Microcrystalline silicon carbide window layers in thin film silicon solar cells

Crystallographic analysis of high quality poly-Si thin films deposited by atmospheric pressure chemical vapor deposition

Silicon Doping Dependence of n-Type Al0.5Ga0.5 N Layers Grown by Metalorganic Chemical Vapor Deposition.

Low-temperature Deposition of Large-Grain Polycrystalline Si Thin Films on Polyethylene Terephthalate

Poly-crystalline thin-film by aluminum induced crystallization on aluminum nitride substrate

Microstructure and Photoelectric Properties of P-Doped Silicon-Rich Sinx Film As an N-Type Layer for Pin-Type Amorphous Silicon Thin Film Solar Cells

n-Type polysilicon passivating contact for industrial bifacial n-type solar cells

Effects on Metallization of n+-Poly-Si Layer for N-Type Tunnel Oxide Passivated Contact Solar Cells

Formation of n-type polycrystalline silicon with controlled doping concentration by flash lamp annealing of catalytic CVD amorphous silicon films

Chemical control of physical properties in silicon nitride films