Abstract:Amorphous silicon (a-Si) and microcrystalline silicon (µc-Si) films were deposited in atmospheric-pressure (AP) He/H2/SiH4 plasma excited by a 150 MHz very high-frequency (VHF) power at a temperature of 220 °C. The variations of thickness and film crystallinity in the gas flow direction were studied using two electrodes (length = 16 and 5 mm). The electrical properties of the deposited Si layers were evaluated by fabricating bottom-gate thin film transistors (TFTs). The results showed that the chemical reactions both in gas phase and on the growing film surface were significantly enhanced in AP-VHF plasma, promoting phase transition from amorphous to microcrystalline on a time scale of the order of less than 0.1 ms. The performance of bottom-gate TFTs showed that a-Si layers formed in the upstream portion of the plasma zone had good enough electrical property (field-effect mobility of 1–1.5 cm2 V−1 s−1) despite very high deposition rates (several tens of nm s−1). Meanwhile, µc-Si layers deposited in the downstream portion of the plasma zone did not acquire their original superiority over a-Si films with reference to electrical properties, although the use of the shorter electrode greatly improved the layer quality. The precise control of gas residence time is primarily important for the deposition of µc-Si films with desired qualities through sufficiently passivating grain boundaries with a-Si tissues.

Crystallographic analysis of high quality poly-Si thin films deposited by atmospheric pressure chemical vapor deposition

Study of plasma-deposited amorphous SiO2 films using infrared absorption techniques

Properties of plasma-deposited amorphous SiO2 films

Thickness Dependence of Properties of Plasma-Deposited Amorphous SiO2 Films

Optimal temperature of crystallization and photoluminescence of SiC/Si (100) film prepared by pulsed ArF excimer laser deposition

Thermochemical process occurring in PLD-derived SiC films during vacuum annealing

Growth of Crystalline SiC Film Free of Cavities by Heating PS/silica Sol-Gel Coatings on Si (111) Substrate

Super large grain size of poly-Si obtained by using the solid-phase crystallization method

EPITAXIAL GROWTH OF (0001)ORIENTED 6H-Sic FILMS ON Si(111) SUBSTRATE BY ORGANIC SOL-GEL FILM ANNEALING

Characterization of polycrystalline silicon carbide films grown by atmospheric pressure chemical vapor deposition on polycrystalline silicon

Growth behavior of polycrystalline silicon thin films deposited by RTCVD on quartz substrates

Preparation of High Quality Polycrystalline Silicon Thin Films by Aluminum-Induced Crystallization

Growth and Mechanical Properties of Amorphous and Nanostructured SiC films

Microstructure and Conductivity of Large Area Nanocrystalline Silicon Films Grown by Specially Designed Thermal-Assisted Chemical Vapor Deposition

Growth of Poly-Crystalline Si Films on Flexible Substrate by Hot Wire Chemical Vapor Deposition

High temperature annealing of hydrogenated amorphous silicon carbide thin films

Influence of the partial pressure of ethene on the crystallinity of 3C-SiC films grown on Si(111) by chemical vapor deposition

Low-temperature Annealing of Polycrystalline Si/sub 1-X/ge/sub X/ after Dopant Implantation

Crystallization of amorphous silicon thin films: The effect of rapid thermal processing pretreatment

Controllability of structural and electrical properties of silicon films grown in atmospheric-pressure very high-frequency plasma

N-Type Polycrystalline Si Thick Films Deposited on SiNx-coated Metallurgical Grade Si Substrates