Effects on Metallization of n+-Poly-Si Layer for N-Type Tunnel Oxide Passivated Contact Solar Cells

Qinqin Wang,Beibei Gao,Wangping Wu,Kaiyuan Guo,Wei Huang,Jianning Ding

DOI: https://doi.org/10.3390/ma17112747

IF: 3.4

2024-06-06

Materials

Abstract:Thin polysilicon (poly-Si)-based passivating contacts can reduce parasitic absorption and the cost of n-TOPCon solar cells. Herein, n+-poly-Si layers with thicknesses of 30~100 nm were fabricated by low-pressure chemical vapor deposition (LPCVD) to create passivating contacts. We investigated the effect of n+-poly-Si layer thickness on the microstructure of the metallization contact formation, passivation, and electronic performance of n-TOPCon solar cells. The thickness of the poly-Si layer significantly affected the passivation of metallization-induced recombination under the metal contact (J0,metal) and the contact resistivity (ρc) of the cells. However, it had a minimal impact on the short-circuit current density (Jsc), which was primarily associated with corroded silver (Ag) at depths of the n+-poly-Si layer exceeding 40 nm. We introduced a thin n+-poly-Si layer with a thickness of 70 nm and a surface concentration of 5 × 1020 atoms/cm3. This layer can meet the requirements for low J0,metal and ρc values, leading to an increase in conversion efficiency of 25.65%. This optimized process of depositing a phosphorus-doped poly-Si layer can be commercially applied in photovoltaics to reduce processing times and lower costs.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,metallurgy & metallurgical engineering

What problem does this paper attempt to address?

The paper aims to address the impact of the n+-polycrystalline silicon (n+-poly-Si) layer thickness on the formation of metallization contacts, passivation effects, and electronic performance in n-type tunnel oxide passivated contact (n-TOPCon) solar cells. Specifically, the study investigates the effects of varying the thickness of the n+-poly-Si layer on the following parameters: 1. **Passivation Effect** (J0): The impact of different thicknesses of the n+-poly-Si/SiO_x layer on the passivation effect. 2. **Metallization-Induced Recombination** (J0,metal): The effect of different thicknesses of the n+-poly-Si layer on the recombination phenomenon caused by silver paste corrosion during the metallization process. 3. **Contact Resistance** (ρc): The influence of different thicknesses of the n+-poly-Si layer on contact resistance. 4. **Short-Circuit Current Density** (Jsc): Although the thickness of the n+-poly-Si layer has a minor impact on the short-circuit current density, the study still analyzes it. The study found that when the n+-poly-Si layer thickness is 70 nm and the surface concentration is 5 × 10^20 atoms/cm^3, lower values of J0,metal and ρc can be achieved, thereby improving the conversion efficiency to 25.65%. This optimization process can be used in commercial photovoltaic technology to reduce processing time and lower costs.

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