Abstract:Conventional p–n junction solar cells exhibit good thermal stability but poor carrier selectivity. The main aim of this study was to achieve improved passivation along with carrier-selective contact for a solar cell having a tunnel oxide passivated contact (TOPCon) structure. To this end, we attempted to optimize the polysilicon (poly-Si) layer deposited on an ultrathin (~1.3 nm) SiO2 tunnel oxide layer to achieve high carrier lifetime and low recombination. We observed the passivation properties under varied thicknesses of the poly-Si layer and the phosphine (PH3) gas flow rate at three different annealing temperatures. Our experimental approach was able to achieve the best passivation properties by use of a moderately thin poly-Si layer. The poly-Si layer thickness was varied from 55 to 113 nm, and the PH3 flow rate was varied from 10 to 80 sccm at three different annealing temperatures in the range of 800–950 °C. The 113-nm-thick poly-Si layer was able to yield an implied open-circuit voltage (i-VOC) of 733 mV along with a very low recombination current density (J0) of 5.2 fA/cm2 at a PH3 flow rate of 40 sccm and post-deposition annealing temperature of 900 °C. A higher annealing temperature resulted in damage to the substrate, which in turn led to poor passivation; hence, optimization of this temperature was necessary. The passivation properties were further improved via the deposition of a thin (10-nm thick) Al2O3 layer on one side (i.e., front side) of the symmetric cell structure. This deposition caused a decrease in J0 to 2.5 fA/cm2 and an increase in i-VOC to 742 mV. These results are attributed to a decrease in the number of interfacial defects, promoted formation of a carrier collector layer, and good field-effect passivation. We performed a simulation study for the realization of a TOPCon solar cell and employed therein the experimentally determined parameters, which yielded highly promising cell results. Our proposed simple and cost-effective approach has high potential for future large-scale production of high-efficiency TOPCon solar cells.

Intrinsic Poly-Si layer thickness: Its role in pinhole contact formation and interface passivation in poly-silicon on oxide solar cells

Simulation of Silicon Solar Cells with Passivation Contact of Tunnel Oxide Layer

Thermal annealing effects on tunnel oxide passivated hole contacts for high-efficiency crystalline silicon solar cells

Analysis of passivation property using thin Al2O3 layer and simulation for realization of high-efficiency TOPCon cell

Effects on Metallization of n+-Poly-Si Layer for N-Type Tunnel Oxide Passivated Contact Solar Cells

Improved interface passivation by optimizing a polysilicon film under different hydrogen dilution in N-type TOPCon silicon solar cells

Carrier transport through the ultrathin silicon-oxide layer in tunnel oxide passivated contact (TOPCon) c-Si solar cells

Unraveling the Passivation Mechanisms of C-Si/Siox/Poly-Si Contacts

Improving the Performance of Industrial TOPCon Solar Cells Through the Insertion of Intrinsic A-Si Layer

Numerical Simulation and Experiment of a High-Efficiency Tunnel Oxide Passivated Contact (TOPCon) Solar Cell Using a Crystalline Nanostructured Silicon-Based Layer

Ultra-thin silicon oxide tunnel layer passivated contacts for screen-printed n-type industry solar cells

Optimizing Phosphorus-Doped Polysilicon in TOPCon Structures Using Silicon Oxide Layers to Improve Silicon Solar Cell Performance

Optimization of activated phosphorus concentration in recrystallized polysilicon layers for the n-TOPCon solar cell application

Effect of Surface Texture on Pinhole Formation in SiO x-Based Passivated Contacts for High-Performance Silicon Solar Cells

Tunnel oxide thickness-dependent dominant carrier transport in crystalline silicon solar cells

Theoretical exploration towards high-efficiency tunnel oxide passivated carrier-selective contacts (TOPCon) solar cells

Role of polysilicon in poly-Si/SiOx passivating contacts for high-efficiency silicon solar cells

Optimization of In-situ and Ex-situ doped p+ Passivating Contact for High Efficiency p-TOPCon Solar Cell Application

Passivation properties of tunnel oxide layer in passivated contact silicon solar cells