Abstract:We report an industrial compatible tunnel oxide passivated contact (TOPCon) structure on solar-grade p-type c-Si wafer as the rear emitter for high-efficiency solar cells, where the ultrathin silicon oxide (SiOx) is made by plasma-assisted oxidation and the P-doped n-type poly-Si (n+-poly-Si) contact layer by plasma-enhanced chemical vapor deposition (PECVD) of hydrogenated amorphous silicon (a-Si:H) with in-situ doping with PH3 and following the high-temperature annealing. The fabrication processes of SiOx and n+-poly-Si layers are systematically optimized. It is found that the optimized annealing temperature for the crystallization and dopant activation is in the range of 850 °C and 880 °C, which is higher than the similar structure with chemically oxidized SiOx (820 °C). In addition, the samples made with higher PH3/SiH4 doping ratio during the a-Si:H deposition need a lower annealing temperature to reach the similar dopant distribution within the samples made with lower doping ratio but annealed at higher temperature, it means that the optimized annealing temperature decreases with the increase of the PH3/SiH4 doping ratio during the deposition of a-Si:H precursor. The optimized process with post-hydrogenation yields excellent surface passivation on the p-type Si substrate with the implied open-circuit voltage (iVoc) of ∼742 mV, the single-side saturated recombination current density (J0) of ∼3.0 fA/cm2, the contact resistivity (ρc) of ∼2–4 mΩ cm2, and the effective minority carrier lifetime (τeff) of ∼1050 μs (Δn = 1 × 1015 cm-3). With these passivation parameters, a simulation study demonstrates the advantage of rear emitter over the conventional front emitter TOPCon solar cell with ∼22.8% achievable efficiency on solar-grade p-type wafers with current industrial constraints, and ∼24.9% on high quality p-type c-Si wafers with the optimized conditions in R&D laboratories. Our study suggests that the p-type c-Si solar cell with a rear n+-poly-Si TOPCon emitter is a viable structure for high-efficiency solar cell production.

Application of dual-layer polysilicon deposited by PECVD in n -type TOPCon solar cells

Optimizing Phosphorus-Doped Polysilicon in TOPCon Structures Using Silicon Oxide Layers to Improve Silicon Solar Cell Performance

Highly improved passivation of PECVD p-type TOPCon by suppressing plasma-oxidation ion-bombardment-induced damages

Bi-layer in-situ phosphorus doped poly-Si films by PECVD for blistering-free high-efficiency industrial TOPCon solar cells

Blistering-free carbon-doped polysilicon (n+) passivating contact with high surface passivation properties prepared by industrial tube PECVD

Passivating Contact with Phosphorus‐Doped Polycrystalline Silicon‐Nitride with an Excellent Implied Open‐Circuit Voltage of 745 mV and Its Application in 23.88% Efficiency TOPCon Solar Cells

24.18% efficiency TOPCon solar cells enabled by super hydrophilic carbon-doped polysilicon films combined with plated metal fingers

High-efficiency n-TOPCon bifacial solar cells with selective poly-Si based passivating contacts

Performance of Large Area n-TOPCon Solar Cells with Selective Poly-Si Based Passivating Contacts Prepared by PECVD Method

Regionalizing Nitrogen Doping of Polysilicon Films Enabling High‐Efficiency Tunnel Oxide Passivating Contact Silicon Solar Cells

An industrially viable TOPCon structure with both ultra-thin SiOx and n+-poly-Si processed by PECVD for p-type c-Si solar cells

Fabrication and Detailed Analysis of 22.0% Rear Junction Double-side TOPCon Solar Cell with Front SiOx/Polysilicon Selective Emitter

Process development and integration of double-side Poly-Si passivated solar cells with printed contacts via LPCVD and ex-situ tube diffusion

Screen-printed n-type industry solar cells with tunnel oxide passivated contact doped by phosphorus diffusion

Improved interface passivation by optimizing a polysilicon film under different hydrogen dilution in N-type TOPCon silicon solar cells

24.7% industrial tunnel oxide passivated contact solar cells prepared through tube PECVD integrating with plasma-assisted oxygen oxidation and in-situ doped polysilicon

Application of n‐Polysilicon Rear Emitter for High‐Efficiency p‐TOPCon Solar Cells

Large-area bifacial n-TOPCon solar cells with in situ phosphorus-doped LPCVD poly-Si passivating contacts

SiOx/polysilicon selective emitter prepared by PECVD-deposited amorphous silicon plus one-step firing enabling excellent J0,met of < 235 fA/cm2 and ρc of < 2 mΩ·cm2

Emitter formation with boron diffusion from PECVD deposited boron-doped silicon oxide for high-efficiency TOPCon solar cells

Optimization of activated phosphorus concentration in recrystallized polysilicon layers for the n-TOPCon solar cell application