Application of n‐Polysilicon Rear Emitter for High‐Efficiency p‐TOPCon Solar Cells

Muhammad Quddamah Khokhar,Hasnain Yousuf,Xinyi Fan,Seungyong Han,Youngkuk Kim,Suresh Kumar Dhungel,Junsin Yi
DOI: https://doi.org/10.1002/adts.202300078
2023-04-23
Advanced Theory and Simulations
Abstract:This paper reports the simulation‐based studies suitable for the development of tunnel oxide passivated contact on p‐type silicon wafers (p‐TOPCon) solar cell with n‐polysilicon passivated contact. Parameters related to Si substrate, metal contact, and surface passivation are optimized for TOPCon structure, which results in the conversion efficiency as high as 24.87% for a p‐type silicon wafer. This study entails the examination of tunnel oxide passivated contact on p‐type silicon wafers (p‐TOPCon) passivated with n‐polysilicon for a solar cell by using Quokka‐3, a numerical simulation program. The effects of the thickness, bulk lifetime, resistivity, and selectivity of charge carriers due to the polysilicon passivated contact are investigated. Through such n‐polysilicon passivated contact, the back‐emitter solar cells engender higher internal power owing to enhanced surface passivation. This further reduces the shading loss due to front metallization; however, the reduced minority carrier lifetime of the p‐type Czochralski (Cz) wafer restricts the possibilities for high efficiency. Subsequently, the minority charge carrier lifetime of the p‐type wafer conceivably becomes an obstacle to realizing TOPCon solar cells with a high conversion efficiency. This study demonstrates that a configuration suitable for the industrial manufacturing of high‐efficiency solar cells is a crystalline silicon solar cell on a p‐type wafer through a rear‐emitter n‐polysilicon passivated contact. A roadmap toward 24.87% of the p‐TOPCon solar cells through the n‐type polysilicon passivated contact is also devised.
multidisciplinary sciences
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