Abstract:A simple and versatile two-step silicon wet etching technique for the control of the width and height of the glass frit bonding layer has been developed to improve bonding strength and reliability in wafer-level microelectromechanical systems (MEMS) packaging processes. The height of the glass frit bonding layer is set by the design of a vertical reference wall which regulates the distance between the silicon wafer and the encapsulation capping substrate. On the other hand, the width of the bonding layer is constrained between two micro grooves which are used to accommodate the spillages of extra glass frit during the bonding process. An optimized thermal bonding process, including the formation of glass liquid, removal of gas bubbles under vacuum and the filling of voids under normal atmospheric condition has been developed to suppress the formation of the bubbles/voids. The stencil printing and pre-sintering processes for the glass frit have been characterized before the thermal bonding process under different magnitudes of bonding pressure. The bonding gap thickness is found to be equal to the height of the reference wall of 10 pm in the prototype design. The bubbles/ voids are found to be suppressed effectively and the bonding strength increases from 10.2 to 19.1 MPa as compared with a conventional thermal annealing process in air. Experimentally, prototype samples are measured to have passed the high hermetic sealing leakage tests of 5 x 10(-8) atm cc s(-1).

Study on the Glass Silicon Anodic Direct Bonding Parameters

Research on Silicon-Glass Direct Bonding at Room Temperature

Study on the mechanism of glass-SiC-glass anodic bonding process

Research on Silicon-Glass Thermal Bonding with SiO2 Film Assist

Silicon-Silicon Anodic Bonding Process With Embedded Glass

Investigation on Silicon-Glass Electrostatic Bonding Time Experiment

Evaluation method for MEMS silicon-glass anodic bonding process

Anodic bonding technology of slender glass tube and silicon in pressure sensor packaging

Experimental Research of the Anodic Bonding in the Si-Glass-Si 3-Layer Structure

Research on Anodic Bonding Process Using Taguchi Method for Maximum Tensile Strength

Study on Anodic Bonding Process of Slender Vitreous Body

Interfacial investigation and mechanical properties of glass-Al-glass anodic bonding process

Investigation of Silicon/Glass Anodic Bonding with Pecvd Silicon Carbide As the Intermediate Layer

Research on Low-Temperature Anodic Bonding Using Induction Heating

Glass Frit Bonding with Controlled Width and Height Using A Two-Step Wet Silicon Etching Procedure

The Study of the Bonding Energy on Silicon-to-Glass Wafer Bonding

Anodic Bonding for Pyrex 7740 and Nitride Silicon for Wafer Level Vacuum Packaging

Bonding of Glass-Based Microfluidic Chips at Low- or Room-Temperature in Routine Laboratory

Effect of Thin SiO2 Layer on Silicon-on-Glass Anodic Bonding

Process Study on Laser Transmission Bonding of Silicon with Glass via Response Surface Methodology

Current Formulas of Silicon-Glass Anodic Bonding