Abstract:High-quality bonding of 4-inch GaAs and Si is achieved using plasma-activated bonding technology. The influence of Ar plasma activation on surface morphology is discussed. When the annealing temperature is 300 °C, the bonding strength reaches a maximum of 6.2 MPa. In addition, a thermal stress model for GaAs/Si wafers is established based on finite element analysis to obtain the distribution of equivalent stress and deformation variables at different temperatures. The shape variation of the wafer is directly proportional to the annealing temperature. At an annealing temperature of 400 °C, the maximum protrusion of 4 inches GaAs/Si wafers is 3.6 mm. The interface of GaAs/Si wafers is observed to be dense and defect-free using a transmission electron microscope. The characterization of interface elements by X-ray energy dispersion spectroscopy indicates that the elements at the interface undergo mutual diffusion, which is beneficial for improving the bonding strength of the interface. There is an amorphous transition layer with a thickness of about 5 nm at the bonding interface. The preparation of Si-based GaAs heterojunctions can enrich the types of materials required for the development of integrated circuits, improve the performance of materials and devices, and promote the development of microelectronics technology.

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Optical Investigations of Directly Wafer-Bonded InP–GaAs Heterojunctions

Observations of Interfaces in Direct Wafer-Bonded InP–GaAs Structures

Low Temperature Au-In-Au Metallic Bonding and Its Application in the Fabrication of Vcsels

Study on Infrared Absorption of Interfaces in Direct Wafer Bonded InP-GaAs Structures

Low Temperature Direct InP/SOI Wafer Bonding Based on Hydrophilic/hydrophobic Treatment

Low-Temperature III–V Direct Wafer Bonding Surface Preparation Using a UV-Sulfur Process

Characteristics of Direct Wafer Bonded InP Materials

Study of InP/SOI Wafer Bonding Based on Wet Surface Activation Treatment

Controlling Electronic Properties of Wafer-Bonded Interfaces among Dissimilar Materials: A Path to Developing Novel Wafer-Bonded Devices

Mechanisms for room temperature direct wafer bonding

High-Temperature Thermoelectric Characterization of III – V Semiconductor Thin Films by Oxide Bonding

Direct Bonding of LiNbO3 and GaAs at Room Temperature by Using Activated Si Atom Layer

Electrical and Structural Analysis of β‐Ga2O3/GaN Wafer‐Bonded Heterojunctions with a ZnO Interlayer

Low Temperature Fine Pitch Au-In Solid Liquid Inter Diffusion Bonding for Wafer Level Packaging

A Model of Low‐Temperature Wafer Bonding And Its Applications

Direct wafer bonding of Ga2O3–SiC at room temperature

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Hybrid bonding of GaAs and Si wafers at low temperature by Ar plasma activation

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Fabrication of InAsP/InGaAsP Quantum-Well 1.3μm VCSELs by Direct Wafer-Bonding