Abstract:We conduct a comprehensive theoretical analysis of wurtzite GaxIn1-xN ternary alloys, focusing on their structural, electronic, elastic, piezoelectric, and dielectric properties through rigorous first-principles calculations. Our investigation systematically explores the influence of varying Ga composition (x = 0%, 25%, 50%, 75%, 100%) on the alloy properties. Remarkably, we observe a distinctive non-linear correlation between the band gap and Ga concentration, attributable to unique slopes in the absolute positions of the valence band maximum and conduction band minimum with respect to Ga concentration. Our effective band structure analysis reveals the meticulous preservation of Bloch characters near band extrema, minimizing charge carrier scattering. Furthermore, we scrutinize deviations from linear Vegard-like dependence in elastic, piezoelectric, and dielectric constants. Additionally, our calculations encompass various optical properties, including absorption coefficient, reflectivity, refractive index, energy loss function, and extinction coefficient. We analyze their trends with photon energy, providing valuable insights into the optical behavior of GaxIn1-xN alloys. Our results, in excellent agreement with available experimental data, significantly contribute to a deeper understanding of the alloys' electronic properties. This study offers valuable insights that may illuminate potential applications of GaxIn1-xN alloys in diverse technological fields.

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Thermal Redistribution of Localized Excitons and Its Effect on the Luminescence Band in InGaN Ternary Alloys

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Study of High Indium InXGa1-XN Alloys with Synchrotron Radiation

Raman scattering study of In xGa 1-xN alloys with low indium compositions

Electron Localization and Emission Mechanism in Wurtzite (al, In, Ga)N Alloys

Localized Exciton Dynamics in AlInGaN Alloy

Weak Localization and Magnetointersubband Scattering Effects in an Alxga1-Xn/Gan Two-Dimensional Electron Gas

Effects of indium composition x and temperature on the raman phonon properties of InxGa1-x N alloys with high Indium composition

First-principles Study of the Light-emitting Mechanism on (in,al)gan Alloys with Different Configurations

Light Emission from Several-Atom In–N Clusters in Wurtzite Ga-rich InGaN Alloys and InGaN/GaN Strained Quantum Wells

Raman Scattering Study of In <sub> <i>x</i> </sub> Ga <sub> 1− <i>x</i> </sub> N Alloys with Low Indium Compositions

Indium distribution and light emission in wurtzite InGaN alloys: Several-atom In-N clusters

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Compositional effects on structural, electronic, elastic, piezoelectric and dielectric properties of GaInN alloys: a first-principles study

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Optical Study of Localized and Delocalized States in Gaasn/Gaas