Study on the Fabrication of Field Emission Arrays Cathode

DONG Jian-kang,QI Kang-cheng,Li Xin-yi,GAO Feng
DOI: https://doi.org/10.3969/j.issn.1005-9490.2008.04.007
2008-01-01
Abstract:The field emission arrays with submicron gate apertures for low voltage operation have been successfully fabricated by modifying the conventional Spindt process.The insulator is formed by local oxidation of silicon,and the gate hole size is decreased due to the lateral encroachment of oxide.Then,the micron hole array is fabricated by wet etching method.Aluminum was deposited at a grazing angle to form a parting layer using the thermal evaporator.Molybdenum was deposited subsequently by the same machine,resulting in the formation of emitter cones on the Si substrate.Finally,by removing the parting layer selectively,molybdenum cone field emitter array is successfully fabricated.To improve the field electron emission of the emission arrays,the lanthanum hexaboride field emission cathode arrays is also fabricated by the same way.The emission characteristics of Mo cone cathode array and lanthanum hexaboride cone cathode array are tested.The results presented in this work have very significant effects in the further application of FEAs.
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